JPS5789218A - Liquid phase growing device of crystal - Google Patents

Liquid phase growing device of crystal

Info

Publication number
JPS5789218A
JPS5789218A JP16624580A JP16624580A JPS5789218A JP S5789218 A JPS5789218 A JP S5789218A JP 16624580 A JP16624580 A JP 16624580A JP 16624580 A JP16624580 A JP 16624580A JP S5789218 A JPS5789218 A JP S5789218A
Authority
JP
Japan
Prior art keywords
cooling
flow
quantities
controlled
cooling fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16624580A
Other languages
English (en)
Other versions
JPS5943087B2 (ja
Inventor
Junichi Nishizawa
Toru Tejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Stanley Electric Co Ltd
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation, Stanley Electric Co Ltd filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP55166245A priority Critical patent/JPS5943087B2/ja
Publication of JPS5789218A publication Critical patent/JPS5789218A/ja
Publication of JPS5943087B2 publication Critical patent/JPS5943087B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP55166245A 1980-11-26 1980-11-26 液相結晶成長装置 Expired JPS5943087B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55166245A JPS5943087B2 (ja) 1980-11-26 1980-11-26 液相結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55166245A JPS5943087B2 (ja) 1980-11-26 1980-11-26 液相結晶成長装置

Publications (2)

Publication Number Publication Date
JPS5789218A true JPS5789218A (en) 1982-06-03
JPS5943087B2 JPS5943087B2 (ja) 1984-10-19

Family

ID=15827797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55166245A Expired JPS5943087B2 (ja) 1980-11-26 1980-11-26 液相結晶成長装置

Country Status (1)

Country Link
JP (1) JPS5943087B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209122A (ja) * 1987-02-21 1988-08-30 サムサン　エレクトロニクス　シーオー．，エルティーディー． 液相薄膜結晶成長方法及び装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209122A (ja) * 1987-02-21 1988-08-30 サムサン　エレクトロニクス　シーオー．，エルティーディー． 液相薄膜結晶成長方法及び装置

Also Published As

Publication number Publication date
JPS5943087B2 (ja) 1984-10-19

Similar Documents

Publication Publication Date Title
US8008174B2 (en) Continuous feed chemical vapor deposition
KR910004296A (ko) 만곡 필라멘트 및 기판 냉각 수단을 포함하는 합성 다이어몬드 도포 장치
US5009029A (en) Conductive temperature control system for plant cultivation
DE69524563D1 (de) Epitaxie reaktor, susceptor und gasströmungssystem
TW200509182A (en) Substrate support having temperature controlled substrate support surface
TW370702B (en) Wafer support with improved temperature control
CN105925958B (zh) 沉积工艺系统及应用于半导体设备的喷射器与上盖板总成
KR970074973A (ko) 기화 장치
CN205465663U (zh) 化学机械研磨装置
JPH01278498A (ja) 堆積物から保護された壁を有するエピタキシアル反応装置
ATE10877T1 (de) Verfahren zur regulierung des waermewirkungsgrads eines waermetauschers und ein waermetauscher zur durchfuehrung des verfahrens.
JPH0786782B2 (ja) ガス状媒体の温度制御配列および方法
JPS5789218A (en) Liquid phase growing device of crystal
GR3020215T3 (en) Downflow heater plant.
EP0462138A1 (en) Temperature-gradient incubator for studying temperature-dependent phenomena
JPH0143009Y2 (ja)
US2307938A (en) Air conditioning apparatus
JPS55110030A (en) Method for vapor growth
KR960006414Y1 (ko) 고속 축류형 레이저의 가스 분배장치
SU1042792A1 (ru) Распределитель газа или жидкости
Kuhn A new hydrodynamic principle for CVD reactors: the boundary condition control
CN2294963Y (zh) 一种可调温度场的加热装置
JPS5623204A (en) Blast furnace bottom
JP3089051B2 (ja) 蓄熱槽設備
SU1095970A1 (ru) Насадка тепломассообменного аппарата