JPS5785666A - Method and apparatus for manufacturing silicon ingot - Google Patents
Method and apparatus for manufacturing silicon ingotInfo
- Publication number
- JPS5785666A JPS5785666A JP56151339A JP15133981A JPS5785666A JP S5785666 A JPS5785666 A JP S5785666A JP 56151339 A JP56151339 A JP 56151339A JP 15133981 A JP15133981 A JP 15133981A JP S5785666 A JPS5785666 A JP S5785666A
- Authority
- JP
- Japan
- Prior art keywords
- silicon ingot
- manufacturing silicon
- manufacturing
- ingot
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Silicon Polymers (AREA)
- Biological Depolymerization Polymers (AREA)
- Formation And Processing Of Food Products (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803036372 DE3036372A1 (en) | 1980-09-26 | 1980-09-26 | Silicon ingot, esp. rod prodn. - by casting melt at rate matching crystallisation rate to save material and operating time (NO 19.4.82) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5785666A true JPS5785666A (en) | 1982-05-28 |
Family
ID=6112941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56151339A Pending JPS5785666A (en) | 1980-09-26 | 1981-09-24 | Method and apparatus for manufacturing silicon ingot |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5785666A (en) |
| AU (1) | AU7567081A (en) |
| BR (1) | BR8106150A (en) |
| CA (1) | CA1194384A (en) |
| DE (1) | DE3036372A1 (en) |
| IT (1) | IT1138624B (en) |
| NO (1) | NO813244L (en) |
| ZA (1) | ZA816673B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124452A (en) * | 1983-12-07 | 1985-07-03 | Hitachi Ltd | Production of metallic sleeve having high purity |
| JPS62107855A (en) * | 1985-11-07 | 1987-05-19 | Mitsubishi Metal Corp | Method for producing materials for vapor deposition or sputtering targets |
-
1980
- 1980-09-26 DE DE19803036372 patent/DE3036372A1/en not_active Withdrawn
-
1981
- 1981-09-23 NO NO813244A patent/NO813244L/en unknown
- 1981-09-24 CA CA000386629A patent/CA1194384A/en not_active Expired
- 1981-09-24 JP JP56151339A patent/JPS5785666A/en active Pending
- 1981-09-25 BR BR8106150A patent/BR8106150A/en unknown
- 1981-09-25 IT IT24144/81A patent/IT1138624B/en active
- 1981-09-25 AU AU75670/81A patent/AU7567081A/en not_active Abandoned
- 1981-09-25 ZA ZA816673A patent/ZA816673B/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124452A (en) * | 1983-12-07 | 1985-07-03 | Hitachi Ltd | Production of metallic sleeve having high purity |
| JPS62107855A (en) * | 1985-11-07 | 1987-05-19 | Mitsubishi Metal Corp | Method for producing materials for vapor deposition or sputtering targets |
| JPH0262110B2 (en) * | 1985-11-07 | 1990-12-21 | Mitsubishi Metal Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3036372A1 (en) | 1982-05-13 |
| ZA816673B (en) | 1982-09-29 |
| IT1138624B (en) | 1986-09-17 |
| IT8124144A0 (en) | 1981-09-25 |
| AU7567081A (en) | 1982-04-01 |
| BR8106150A (en) | 1982-06-15 |
| CA1194384A (en) | 1985-10-01 |
| NO813244L (en) | 1982-03-29 |
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