JPS5782287A - Refresh device for dynamic memory - Google Patents

Refresh device for dynamic memory

Info

Publication number
JPS5782287A
JPS5782287A JP55158391A JP15839180A JPS5782287A JP S5782287 A JPS5782287 A JP S5782287A JP 55158391 A JP55158391 A JP 55158391A JP 15839180 A JP15839180 A JP 15839180A JP S5782287 A JPS5782287 A JP S5782287A
Authority
JP
Japan
Prior art keywords
refresh
circuit
request
signal
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55158391A
Other languages
Japanese (ja)
Inventor
Yasutomo Otake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55158391A priority Critical patent/JPS5782287A/en
Publication of JPS5782287A publication Critical patent/JPS5782287A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Abstract

PURPOSE:To surely perform refresh opeation for a prescribed time, by performing the adjustment between a refresh request and an access request with a wait signal processing, in a refresh circuit for dynamic memory. CONSTITUTION:A refresh request generating circuit 3 frequency-divides system clocks and gives a refresh request signal to a memory adjusting circuit 4. The circuit 4 compares an access start signal from a memory access inhibiting circuit 2 with a refresh request generating signal to discrimate the advanced production, and if the refresh request is produced earlier, or if a wait signal is sampled at a wait signal sample circuit 5 even with a memory access request produced earlier, the refresh controller 7 temporarily stops the operation of the memory access request producing source to execute the refresh operation for the period.
JP55158391A 1980-11-08 1980-11-08 Refresh device for dynamic memory Pending JPS5782287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55158391A JPS5782287A (en) 1980-11-08 1980-11-08 Refresh device for dynamic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55158391A JPS5782287A (en) 1980-11-08 1980-11-08 Refresh device for dynamic memory

Publications (1)

Publication Number Publication Date
JPS5782287A true JPS5782287A (en) 1982-05-22

Family

ID=15670699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158391A Pending JPS5782287A (en) 1980-11-08 1980-11-08 Refresh device for dynamic memory

Country Status (1)

Country Link
JP (1) JPS5782287A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323352A (en) * 1990-09-07 1994-06-21 Sharp Kabushiki Kaisha Refresh control circuit for memory
JP2010033702A (en) * 2002-08-12 2010-02-12 Samsung Electronics Co Ltd Semiconductor memory system for generating refresh flag

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323352A (en) * 1990-09-07 1994-06-21 Sharp Kabushiki Kaisha Refresh control circuit for memory
JP2010033702A (en) * 2002-08-12 2010-02-12 Samsung Electronics Co Ltd Semiconductor memory system for generating refresh flag

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