JPS5779682A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS5779682A
JPS5779682A JP15533980A JP15533980A JPS5779682A JP S5779682 A JPS5779682 A JP S5779682A JP 15533980 A JP15533980 A JP 15533980A JP 15533980 A JP15533980 A JP 15533980A JP S5779682 A JPS5779682 A JP S5779682A
Authority
JP
Japan
Prior art keywords
plane
region
light
luminous
theta
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15533980A
Other languages
Japanese (ja)
Other versions
JPS6244718B2 (en
Inventor
Hiroo Yonezu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15533980A priority Critical patent/JPS5779682A/en
Publication of JPS5779682A publication Critical patent/JPS5779682A/en
Publication of JPS6244718B2 publication Critical patent/JPS6244718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce effective luminous area and to increase luminous intensity and output and to improve linearity as well by providing a light radiating plane crossing with a narrow striped luminous region at right angles and composing a tilt angle to an active layer. CONSTITUTION:Light almost vertically emitted from the striped luminous region 102 of an active layer 101 to a light radiating plane 100 having a tilt angle of theta is coupled with an optical fiber. Since the plane 100 is provided with an angle theta against the layer 101, a light source image 104 on the plane 100 of the region 102 is reduced by cos theta against the length direction.
JP15533980A 1980-11-05 1980-11-05 Light emitting diode Granted JPS5779682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15533980A JPS5779682A (en) 1980-11-05 1980-11-05 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15533980A JPS5779682A (en) 1980-11-05 1980-11-05 Light emitting diode

Publications (2)

Publication Number Publication Date
JPS5779682A true JPS5779682A (en) 1982-05-18
JPS6244718B2 JPS6244718B2 (en) 1987-09-22

Family

ID=15603722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15533980A Granted JPS5779682A (en) 1980-11-05 1980-11-05 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS5779682A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117073A (en) * 1987-10-29 1989-05-09 Mitsubishi Electric Corp Edge emission type led

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49111592A (en) * 1973-02-21 1974-10-24
JPS5258492A (en) * 1975-11-10 1977-05-13 Sumitomo Electric Ind Ltd Semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49111592A (en) * 1973-02-21 1974-10-24
JPS5258492A (en) * 1975-11-10 1977-05-13 Sumitomo Electric Ind Ltd Semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01117073A (en) * 1987-10-29 1989-05-09 Mitsubishi Electric Corp Edge emission type led

Also Published As

Publication number Publication date
JPS6244718B2 (en) 1987-09-22

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