JPS5778163A - Base diffused restistor - Google Patents

Base diffused restistor

Info

Publication number
JPS5778163A
JPS5778163A JP15352980A JP15352980A JPS5778163A JP S5778163 A JPS5778163 A JP S5778163A JP 15352980 A JP15352980 A JP 15352980A JP 15352980 A JP15352980 A JP 15352980A JP S5778163 A JPS5778163 A JP S5778163A
Authority
JP
Japan
Prior art keywords
resistor
bias
terminals
layer
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15352980A
Other languages
Japanese (ja)
Inventor
Yoshihiko Watanabe
Akio Tokuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP15352980A priority Critical patent/JPS5778163A/en
Publication of JPS5778163A publication Critical patent/JPS5778163A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Abstract

PURPOSE:To maintain the resistance value of a resistor in an IC constantly without variation of current by providing a bias terminal in the vicinity of each resistance terminal of an epitaxial layer formed with a diffused resistor and applying constant amount of bias to the terminal. CONSTITUTION:A p type diffused resistor 2 is formed in the step of diffusing a base, for example, in an n type epitaxial layer 1 of an IC substrate. Bias terminals 4, 4' are provided at the layer 2 disposed in the vicinity of terminals 3, 3' provided at the resistor 2, and buffer amplifiers 5, 5' and power sources 6, 6' are serially connected between the bias terminals 4, 4' and the terminals 3, 3'. Thus, the bias is applied to the layer 1, the same current as a signal current flowing through the resistor 2 is flowed through the layer 1, and the juction voltage can be maintained constantly irrespective of the signal current. Accordingly, the resistance value can be maintained accurately constantly, and it is adapted for an NF resistor for low distortion feedback amplifier.
JP15352980A 1980-10-31 1980-10-31 Base diffused restistor Pending JPS5778163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15352980A JPS5778163A (en) 1980-10-31 1980-10-31 Base diffused restistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15352980A JPS5778163A (en) 1980-10-31 1980-10-31 Base diffused restistor

Publications (1)

Publication Number Publication Date
JPS5778163A true JPS5778163A (en) 1982-05-15

Family

ID=15564510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15352980A Pending JPS5778163A (en) 1980-10-31 1980-10-31 Base diffused restistor

Country Status (1)

Country Link
JP (1) JPS5778163A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50100993A (en) * 1973-12-20 1975-08-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50100993A (en) * 1973-12-20 1975-08-11

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