JPS577120B2 - - Google Patents

Info

Publication number
JPS577120B2
JPS577120B2 JP14292078A JP14292078A JPS577120B2 JP S577120 B2 JPS577120 B2 JP S577120B2 JP 14292078 A JP14292078 A JP 14292078A JP 14292078 A JP14292078 A JP 14292078A JP S577120 B2 JPS577120 B2 JP S577120B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14292078A
Other versions
JPS5485669A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5485669A publication Critical patent/JPS5485669A/ja
Publication of JPS577120B2 publication Critical patent/JPS577120B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
JP14292078A 1977-11-21 1978-11-21 High concentration phosphorus silica spin and pant controlled coating composition and method of producing same Granted JPS5485669A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/853,345 US4243427A (en) 1977-11-21 1977-11-21 High concentration phosphoro-silica spin-on dopant

Publications (2)

Publication Number Publication Date
JPS5485669A JPS5485669A (en) 1979-07-07
JPS577120B2 true JPS577120B2 (ja) 1982-02-08

Family

ID=25315784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14292078A Granted JPS5485669A (en) 1977-11-21 1978-11-21 High concentration phosphorus silica spin and pant controlled coating composition and method of producing same

Country Status (2)

Country Link
US (1) US4243427A (ja)
JP (1) JPS5485669A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194237U (ja) * 1983-06-13 1984-12-24 アルプス電気株式会社 薄膜スイツチの空気逃げ機構
JPS6023920A (ja) * 1984-06-28 1985-02-06 松下電器産業株式会社 薄形スイツチ
JPH0524987Y2 (ja) * 1983-11-30 1993-06-24

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2114365B (en) * 1982-01-28 1986-08-06 Owens Illinois Inc Process for forming a doped oxide film and composite article
US4605450A (en) * 1982-02-11 1986-08-12 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4571366A (en) * 1982-02-11 1986-02-18 Owens-Illinois, Inc. Process for forming a doped oxide film and doped semiconductor
US4521441A (en) * 1983-12-19 1985-06-04 Motorola, Inc. Plasma enhanced diffusion process
US4619839A (en) * 1984-12-12 1986-10-28 Fairchild Camera & Instrument Corp. Method of forming a dielectric layer on a semiconductor device
DE3704518A1 (de) * 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
DE69935064T2 (de) 1998-06-10 2008-01-03 Koninklijke Philips Electronics N.V. Halbleiteranordnung mit einer integrierten schaltung und keramischer sicherheitsschicht und verfahren zum herstellen solcher anordnung
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
TW502286B (en) * 1999-12-09 2002-09-11 Koninkl Philips Electronics Nv Semiconductor device comprising a security coating and smartcard provided with such a device
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
WO2013028689A2 (en) * 2011-08-25 2013-02-28 Honeywell International Inc. Phosphate esters, phosphate-comprising dopants, and methods for fabricating phosphate-comprising dopants using silicon monomers
US8629294B2 (en) 2011-08-25 2014-01-14 Honeywell International Inc. Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants
US8975170B2 (en) 2011-10-24 2015-03-10 Honeywell International Inc. Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions
US9196486B2 (en) * 2012-10-26 2015-11-24 Innovalight, Inc. Inorganic phosphate containing doping compositions

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3486951A (en) * 1967-06-16 1969-12-30 Corning Glass Works Method of manufacturing semiconductor devices
US3834939A (en) * 1970-02-19 1974-09-10 Ibm Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US3998668A (en) * 1973-12-21 1976-12-21 Owens-Illinois, Inc. Aluminum metaphosphate dopant sources

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194237U (ja) * 1983-06-13 1984-12-24 アルプス電気株式会社 薄膜スイツチの空気逃げ機構
JPH0524987Y2 (ja) * 1983-11-30 1993-06-24
JPS6023920A (ja) * 1984-06-28 1985-02-06 松下電器産業株式会社 薄形スイツチ

Also Published As

Publication number Publication date
JPS5485669A (en) 1979-07-07
US4243427A (en) 1981-01-06

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