JPS576706B2 - - Google Patents
Info
- Publication number
- JPS576706B2 JPS576706B2 JP16028676A JP16028676A JPS576706B2 JP S576706 B2 JPS576706 B2 JP S576706B2 JP 16028676 A JP16028676 A JP 16028676A JP 16028676 A JP16028676 A JP 16028676A JP S576706 B2 JPS576706 B2 JP S576706B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16028676A JPS5384571A (en) | 1976-12-29 | 1976-12-29 | Insulating gate type field effect transistor and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16028676A JPS5384571A (en) | 1976-12-29 | 1976-12-29 | Insulating gate type field effect transistor and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5384571A JPS5384571A (en) | 1978-07-26 |
| JPS576706B2 true JPS576706B2 (forum.php) | 1982-02-06 |
Family
ID=15711692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16028676A Granted JPS5384571A (en) | 1976-12-29 | 1976-12-29 | Insulating gate type field effect transistor and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5384571A (forum.php) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615078A (en) * | 1979-07-17 | 1981-02-13 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE3069973D1 (en) * | 1979-08-25 | 1985-02-28 | Zaidan Hojin Handotai Kenkyu | Insulated-gate field-effect transistor |
| JPS5833870A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | 半導体装置 |
| DE3208500A1 (de) * | 1982-03-09 | 1983-09-15 | Siemens AG, 1000 Berlin und 8000 München | Spannungsfester mos-transistor fuer hoechstintegrierte schaltungen |
| JPH0770715B2 (ja) * | 1988-01-19 | 1995-07-31 | 松下電器産業株式会社 | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818785B2 (ja) * | 1973-10-09 | 1983-04-14 | 日本電気株式会社 | シユウセキカイロソウチノ セイゾウホウホウ |
| JPS5066181A (forum.php) * | 1973-10-12 | 1975-06-04 | ||
| JPS52107777A (en) * | 1976-03-08 | 1977-09-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor unit |
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1976
- 1976-12-29 JP JP16028676A patent/JPS5384571A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5384571A (en) | 1978-07-26 |