JPS576685B2 - - Google Patents

Info

Publication number
JPS576685B2
JPS576685B2 JP9913579A JP9913579A JPS576685B2 JP S576685 B2 JPS576685 B2 JP S576685B2 JP 9913579 A JP9913579 A JP 9913579A JP 9913579 A JP9913579 A JP 9913579A JP S576685 B2 JPS576685 B2 JP S576685B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9913579A
Other languages
Japanese (ja)
Other versions
JPS5623739A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9913579A priority Critical patent/JPS5623739A/en
Publication of JPS5623739A publication Critical patent/JPS5623739A/en
Publication of JPS576685B2 publication Critical patent/JPS576685B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
JP9913579A 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer Granted JPS5623739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9913579A JPS5623739A (en) 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9913579A JPS5623739A (en) 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer

Publications (2)

Publication Number Publication Date
JPS5623739A JPS5623739A (en) 1981-03-06
JPS576685B2 true JPS576685B2 (en) 1982-02-06

Family

ID=14239278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9913579A Granted JPS5623739A (en) 1979-08-04 1979-08-04 Manufactue of semiconductor element having buried layer

Country Status (1)

Country Link
JP (1) JPS5623739A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770732B2 (en) * 1985-07-15 1995-07-31 東洋電機製造株式会社 Method for manufacturing semiconductor device substrate having buried layer
JPH03161248A (en) * 1989-11-15 1991-07-11 Okuma Mach Works Ltd Indexing control device for tool rest of nc lathe
WO2002079551A1 (en) * 2001-03-30 2002-10-10 Koninklijke Philips Electronics N.V. Suppression of n-type autodoping in low-temperature si and sige epitaxy

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
JPS53135571A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Vapor phase growth method for semiconductor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
JPS53135571A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Vapor phase growth method for semiconductor

Also Published As

Publication number Publication date
JPS5623739A (en) 1981-03-06

Similar Documents

Publication Publication Date Title
BR8002583A (en)
FR2447963B1 (en)
FR2448257B1 (en)
BR8006808A (en)
DE2954443A1 (en)
AU78391S (en)
AU79200S (en)
AU78271S (en)
AU78385S (en)
AU78386S (en)
AU78389S (en)
AU78390S (en)
AU77763S (en)
AU78569S (en)
AU78270S (en)
AU79557S (en)
AU79558S (en)
AU79559S (en)
AU79826S (en)
AU79918S (en)
AU79950S (en)
AU80228S (en)
BR5901094U (en)
AU77669S (en)
BE878260A (en)