JPS576272B2 - - Google Patents
Info
- Publication number
- JPS576272B2 JPS576272B2 JP5982177A JP5982177A JPS576272B2 JP S576272 B2 JPS576272 B2 JP S576272B2 JP 5982177 A JP5982177 A JP 5982177A JP 5982177 A JP5982177 A JP 5982177A JP S576272 B2 JPS576272 B2 JP S576272B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982177A JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982177A JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53145577A JPS53145577A (en) | 1978-12-18 |
| JPS576272B2 true JPS576272B2 (en, 2012) | 1982-02-04 |
Family
ID=13124263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5982177A Granted JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53145577A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6219818U (en, 2012) * | 1985-07-22 | 1987-02-05 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3633161A1 (de) * | 1986-09-30 | 1988-04-07 | Licentia Gmbh | Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone |
| JPS6420648A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH01259570A (ja) * | 1988-04-11 | 1989-10-17 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPH0282575A (ja) * | 1988-09-19 | 1990-03-23 | Toshiba Corp | 半導体装置およびその製造方法 |
-
1977
- 1977-05-25 JP JP5982177A patent/JPS53145577A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6219818U (en, 2012) * | 1985-07-22 | 1987-02-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53145577A (en) | 1978-12-18 |