JPS5758072B2 - - Google Patents
Info
- Publication number
- JPS5758072B2 JPS5758072B2 JP50071767A JP7176775A JPS5758072B2 JP S5758072 B2 JPS5758072 B2 JP S5758072B2 JP 50071767 A JP50071767 A JP 50071767A JP 7176775 A JP7176775 A JP 7176775A JP S5758072 B2 JPS5758072 B2 JP S5758072B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50071767A JPS51147972A (en) | 1975-06-13 | 1975-06-13 | Insulated gate field effect semiconductor device |
| GB29886/75A GB1518984A (en) | 1974-07-16 | 1975-07-16 | Integrated circuit |
| DE2531846A DE2531846C2 (de) | 1974-07-16 | 1975-07-16 | Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor |
| US05/768,897 US4115709A (en) | 1974-07-16 | 1977-02-15 | Gate controlled diode protection for drain of IGFET |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50071767A JPS51147972A (en) | 1975-06-13 | 1975-06-13 | Insulated gate field effect semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55106938A Division JPS6048913B2 (ja) | 1980-08-04 | 1980-08-04 | 絶縁ゲ−ト型電界効果半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51147972A JPS51147972A (en) | 1976-12-18 |
| JPS5758072B2 true JPS5758072B2 (US20020128544A1-20020912-P00008.png) | 1982-12-08 |
Family
ID=13470018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50071767A Granted JPS51147972A (en) | 1974-07-16 | 1975-06-13 | Insulated gate field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51147972A (US20020128544A1-20020912-P00008.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63137225U (US20020128544A1-20020912-P00008.png) * | 1987-02-27 | 1988-09-09 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
| JPS56118371A (en) * | 1980-02-22 | 1981-09-17 | Fujitsu Ltd | Semiconductor integrated circuit device |
| US6794719B2 (en) * | 2001-06-28 | 2004-09-21 | Koninklijke Philips Electronics N.V. | HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110773A (en) * | 1974-07-16 | 1976-01-28 | Nippon Electric Co | Mos gatahandotaikairo |
-
1975
- 1975-06-13 JP JP50071767A patent/JPS51147972A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5110773A (en) * | 1974-07-16 | 1976-01-28 | Nippon Electric Co | Mos gatahandotaikairo |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63137225U (US20020128544A1-20020912-P00008.png) * | 1987-02-27 | 1988-09-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51147972A (en) | 1976-12-18 |
