JPS5756780B2 - - Google Patents

Info

Publication number
JPS5756780B2
JPS5756780B2 JP51007960A JP796076A JPS5756780B2 JP S5756780 B2 JPS5756780 B2 JP S5756780B2 JP 51007960 A JP51007960 A JP 51007960A JP 796076 A JP796076 A JP 796076A JP S5756780 B2 JPS5756780 B2 JP S5756780B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51007960A
Other languages
Japanese (ja)
Other versions
JPS5291658A (en
Inventor
Yoichi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP796076A priority Critical patent/JPS5291658A/ja
Publication of JPS5291658A publication Critical patent/JPS5291658A/ja
Publication of JPS5756780B2 publication Critical patent/JPS5756780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP796076A 1976-01-29 1976-01-29 Semiconductor device Granted JPS5291658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP796076A JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP796076A JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5291658A JPS5291658A (en) 1977-08-02
JPS5756780B2 true JPS5756780B2 (US20030199744A1-20031023-C00003.png) 1982-12-01

Family

ID=11680041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP796076A Granted JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5291658A (US20030199744A1-20031023-C00003.png)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209044A (ja) * 1984-03-30 1985-10-21 東洋紡績株式会社 タイヤコ−ド用織物
JPS6134244A (ja) * 1984-07-26 1986-02-18 東レ株式会社 樹脂補強用織物およびその製造方法
JPH0211173U (US20030199744A1-20031023-C00003.png) * 1988-07-05 1990-01-24
JPH0343268Y2 (US20030199744A1-20031023-C00003.png) * 1987-04-11 1991-09-10

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209044A (ja) * 1984-03-30 1985-10-21 東洋紡績株式会社 タイヤコ−ド用織物
JPS6134244A (ja) * 1984-07-26 1986-02-18 東レ株式会社 樹脂補強用織物およびその製造方法
JPH0343268Y2 (US20030199744A1-20031023-C00003.png) * 1987-04-11 1991-09-10
JPH0211173U (US20030199744A1-20031023-C00003.png) * 1988-07-05 1990-01-24

Also Published As

Publication number Publication date
JPS5291658A (en) 1977-08-02

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