JPS5756204B2 - - Google Patents

Info

Publication number
JPS5756204B2
JPS5756204B2 JP49025945A JP2594574A JPS5756204B2 JP S5756204 B2 JPS5756204 B2 JP S5756204B2 JP 49025945 A JP49025945 A JP 49025945A JP 2594574 A JP2594574 A JP 2594574A JP S5756204 B2 JPS5756204 B2 JP S5756204B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49025945A
Other languages
Japanese (ja)
Other versions
JPS50120258A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP49025945A priority Critical patent/JPS5756204B2/ja
Priority to CA75220991A priority patent/CA1049127A/en
Priority to FR7506766A priority patent/FR2264392B1/fr
Priority to GB9154/75A priority patent/GB1503983A/en
Priority to DE2509585A priority patent/DE2509585C3/de
Publication of JPS50120258A publication Critical patent/JPS50120258A/ja
Priority to US05/968,924 priority patent/US4255755A/en
Publication of JPS5756204B2 publication Critical patent/JPS5756204B2/ja
Expired legal-status Critical Current

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JP49025945A 1974-03-05 1974-03-05 Expired JPS5756204B2 (enrdf_load_stackoverflow)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP49025945A JPS5756204B2 (enrdf_load_stackoverflow) 1974-03-05 1974-03-05
CA75220991A CA1049127A (en) 1974-03-05 1975-02-28 Semiconductor devices with improved heat radiation and current concentration
FR7506766A FR2264392B1 (enrdf_load_stackoverflow) 1974-03-05 1975-03-04
GB9154/75A GB1503983A (en) 1974-03-05 1975-03-05 Semiconductor device
DE2509585A DE2509585C3 (de) 1974-03-05 1975-03-05 Halbleiterbauelement mit mehreren epitaktischen Halbleiterschichten, insbesondere Halbleiterlaser oder Feldeffektransistor, sowie Verfahren zu dessen Herstellung
US05/968,924 US4255755A (en) 1974-03-05 1978-12-13 Heterostructure semiconductor device having a top layer etched to form a groove to enable electrical contact with the lower layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49025945A JPS5756204B2 (enrdf_load_stackoverflow) 1974-03-05 1974-03-05

Publications (2)

Publication Number Publication Date
JPS50120258A JPS50120258A (enrdf_load_stackoverflow) 1975-09-20
JPS5756204B2 true JPS5756204B2 (enrdf_load_stackoverflow) 1982-11-29

Family

ID=12179883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49025945A Expired JPS5756204B2 (enrdf_load_stackoverflow) 1974-03-05 1974-03-05

Country Status (1)

Country Link
JP (1) JPS5756204B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5231664A (en) * 1975-09-04 1977-03-10 Fujitsu Ltd Production method of semiconductor device
JPS5269264A (en) * 1975-12-05 1977-06-08 Matsushita Electronics Corp Selected diffusion method
JPS5275269A (en) * 1975-12-19 1977-06-24 Matsushita Electronics Corp Selective diffusion method
JPS52106682A (en) * 1976-03-05 1977-09-07 Nippon Telegr & Teleph Corp <Ntt> Preparation of semiconductor
JPS5710924A (en) * 1980-06-24 1982-01-20 Mitsubishi Electric Corp Selective diffusion process for impurity into semiconductor crystal
JPS5885524A (ja) * 1981-11-16 1983-05-21 Mitsubishi Electric Corp 半導体への不純物の拡散方法
JPS62139320A (ja) * 1985-12-13 1987-06-23 Furukawa Electric Co Ltd:The 化合物半導体への選択固相拡散方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832469A (enrdf_load_stackoverflow) * 1971-08-31 1973-04-28

Also Published As

Publication number Publication date
JPS50120258A (enrdf_load_stackoverflow) 1975-09-20

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