JPS5751258B2 - - Google Patents

Info

Publication number
JPS5751258B2
JPS5751258B2 JP48069976A JP6997673A JPS5751258B2 JP S5751258 B2 JPS5751258 B2 JP S5751258B2 JP 48069976 A JP48069976 A JP 48069976A JP 6997673 A JP6997673 A JP 6997673A JP S5751258 B2 JPS5751258 B2 JP S5751258B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48069976A
Other languages
Japanese (ja)
Other versions
JPS4952979A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4952979A publication Critical patent/JPS4952979A/ja
Publication of JPS5751258B2 publication Critical patent/JPS5751258B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • G01N21/9505Wafer internal defects, e.g. microcracks
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Light Receiving Elements (AREA)
JP48069976A 1972-07-03 1973-06-22 Expired JPS5751258B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26835572A 1972-07-03 1972-07-03

Publications (2)

Publication Number Publication Date
JPS4952979A JPS4952979A (en:Method) 1974-05-23
JPS5751258B2 true JPS5751258B2 (en:Method) 1982-11-01

Family

ID=23022609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48069976A Expired JPS5751258B2 (en:Method) 1972-07-03 1973-06-22

Country Status (5)

Country Link
US (1) US3767304A (en:Method)
JP (1) JPS5751258B2 (en:Method)
DE (1) DE2330515C2 (en:Method)
FR (1) FR2191735A5 (en:Method)
GB (1) GB1413723A (en:Method)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999865A (en) * 1974-12-09 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for determining the mechanism responsible for laser-induced damage
JPS5483371A (en) * 1977-12-16 1979-07-03 Fujitsu Ltd Measurement method of impurity concentration of semiconductor
US4238686A (en) * 1979-09-05 1980-12-09 Bell Telephone Laboratories, Incorporated Method of analyzing localized nonuniformities in luminescing materials
JPH0641910B2 (ja) * 1988-03-04 1994-06-01 三井金属鉱業株式会社 比抵抗の分散の測定方法
US5126569A (en) * 1989-03-10 1992-06-30 Massachusetts Institute Of Technology Apparatus for measuring optical properties of materials
DE69232432T2 (de) * 1991-11-20 2002-07-18 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung einer Halbleiteranordnung
US5981949A (en) * 1996-01-18 1999-11-09 The United States Of America As Represented By The Secretary Of The Air Force Locating defects in solid material
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
DE102005061834B4 (de) 2005-12-23 2007-11-08 Ioss Intelligente Optische Sensoren & Systeme Gmbh Vorrichtung und Verfahren zum optischen Prüfen einer Oberfläche
MY180533A (en) * 2014-03-17 2020-12-01 Shinetsu Chemical Co Methods for working synthetic quartz glass substrate having a mirror-like surface and method for sensing synthetic quartz glass substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL259237A (en:Method) * 1959-12-24
US3297873A (en) * 1963-12-30 1967-01-10 Avco Corp Microscope system with means for viewing the entire image and means for measuring radiation from a selected segment of image
US3405270A (en) * 1965-08-06 1968-10-08 Western Electric Co Internal flaw detection using collimated beams
US3465150A (en) * 1967-06-15 1969-09-02 Frances Hugle Method of aligning semiconductors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN *
JOURNAL OF APPLIED PHYSICS *

Also Published As

Publication number Publication date
FR2191735A5 (en:Method) 1974-02-01
US3767304A (en) 1973-10-23
GB1413723A (en) 1975-11-12
DE2330515A1 (de) 1974-01-31
DE2330515C2 (de) 1983-01-27
JPS4952979A (en:Method) 1974-05-23

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