JPS57501003A - - Google Patents
Info
- Publication number
- JPS57501003A JPS57501003A JP81500476A JP50047681A JPS57501003A JP S57501003 A JPS57501003 A JP S57501003A JP 81500476 A JP81500476 A JP 81500476A JP 50047681 A JP50047681 A JP 50047681A JP S57501003 A JPS57501003 A JP S57501003A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1980/000675 WO1981003570A1 (en) | 1980-06-02 | 1980-06-02 | Shared quiet line flip-flop |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57501003A true JPS57501003A (de) | 1982-06-03 |
Family
ID=22154383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP81500476A Pending JPS57501003A (de) | 1980-06-02 | 1980-06-02 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0052101A1 (de) |
| JP (1) | JPS57501003A (de) |
| WO (1) | WO1981003570A1 (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0754629B2 (ja) * | 1985-07-01 | 1995-06-07 | 日本電気株式会社 | メモリ回路 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739355A (en) * | 1971-05-28 | 1973-06-12 | Burroughs Corp | Sense amplifier for high speed memory |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3942164A (en) * | 1975-01-30 | 1976-03-02 | Semi, Inc. | Sense line coupling reduction system |
| US4110842A (en) * | 1976-11-15 | 1978-08-29 | Advanced Micro Devices, Inc. | Random access memory with memory status for improved access and cycle times |
| JPS53106552A (en) * | 1977-02-28 | 1978-09-16 | Toshiba Corp | Waveform shaping circuit |
| US4129793A (en) * | 1977-06-16 | 1978-12-12 | International Business Machines Corporation | High speed true/complement driver |
| US4168490A (en) * | 1978-06-26 | 1979-09-18 | Fairchild Camera And Instrument Corporation | Addressable word line pull-down circuit |
| JPH05255338A (ja) * | 1992-03-11 | 1993-10-05 | Nippon Soda Co Ltd | 金属ポルフィリン錯体 |
-
1980
- 1980-06-02 EP EP19810900233 patent/EP0052101A1/de not_active Withdrawn
- 1980-06-02 WO PCT/US1980/000675 patent/WO1981003570A1/en not_active Application Discontinuation
- 1980-06-02 JP JP81500476A patent/JPS57501003A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0052101A1 (de) | 1982-05-26 |
| WO1981003570A1 (en) | 1981-12-10 |