JPS57500669A - - Google Patents
Info
- Publication number
- JPS57500669A JPS57500669A JP50030181A JP50030181A JPS57500669A JP S57500669 A JPS57500669 A JP S57500669A JP 50030181 A JP50030181 A JP 50030181A JP 50030181 A JP50030181 A JP 50030181A JP S57500669 A JPS57500669 A JP S57500669A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9897979A | 1979-11-30 | 1979-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57500669A true JPS57500669A (US20020128544A1-20020912-P00008.png) | 1982-04-15 |
Family
ID=22271822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50030181A Pending JPS57500669A (US20020128544A1-20020912-P00008.png) | 1979-11-30 | 1980-10-20 |
Country Status (6)
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4923526A (en) * | 1985-02-20 | 1990-05-08 | Mitsubishi Denki Kabushiki Kaisha | Homogeneous fine grained metal film on substrate and manufacturing method thereof |
EP0223698A3 (en) * | 1985-11-14 | 1987-11-19 | Thomson Components-Mostek Corporation | Hillock immunization mask |
JP2680468B2 (ja) * | 1989-07-01 | 1997-11-19 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
US4976809A (en) * | 1989-12-18 | 1990-12-11 | North American Philips Corp, Signetics Division | Method of forming an aluminum conductor with highly oriented grain structure |
US5709958A (en) * | 1992-08-27 | 1998-01-20 | Kabushiki Kaisha Toshiba | Electronic parts |
US6001461A (en) * | 1992-08-27 | 1999-12-14 | Kabushiki Kaisha Toshiba | Electronic parts and manufacturing method thereof |
EP0594286B1 (en) * | 1992-08-27 | 1998-11-25 | Kabushiki Kaisha Toshiba | Electronic parts with metal wiring and manufacturing method thereof |
US5488013A (en) * | 1993-12-20 | 1996-01-30 | International Business Machines Corporation | Method of forming transverse diffusion barrier interconnect structure |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879840A (en) * | 1969-01-15 | 1975-04-29 | Ibm | Copper doped aluminum conductive stripes and method therefor |
US3754168A (en) * | 1970-03-09 | 1973-08-21 | Texas Instruments Inc | Metal contact and interconnection system for nonhermetic enclosed semiconductor devices |
US3833842A (en) * | 1970-03-09 | 1974-09-03 | Texas Instruments Inc | Modified tungsten metallization for semiconductor devices |
US3830657A (en) * | 1971-06-30 | 1974-08-20 | Ibm | Method for making integrated circuit contact structure |
US3743894A (en) * | 1972-06-01 | 1973-07-03 | Motorola Inc | Electromigration resistant semiconductor contacts and the method of producing same |
DE2419157C3 (de) * | 1974-04-20 | 1979-06-28 | W.C. Heraeus Gmbh, 6450 Hanau | Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung |
US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
US4062720A (en) * | 1976-08-23 | 1977-12-13 | International Business Machines Corporation | Process for forming a ledge-free aluminum-copper-silicon conductor structure |
US4166279A (en) * | 1977-12-30 | 1979-08-28 | International Business Machines Corporation | Electromigration resistance in gold thin film conductors |
-
1980
- 1980-10-20 EP EP81900097A patent/EP0040629B1/en not_active Expired
- 1980-10-20 DE DE8181900097T patent/DE3071878D1/de not_active Expired
- 1980-10-20 JP JP50030181A patent/JPS57500669A/ja active Pending
- 1980-10-20 WO PCT/US1980/001384 patent/WO1981001629A1/en active IP Right Grant
- 1980-10-22 CA CA000363015A patent/CA1149082A/en not_active Expired
- 1980-11-26 GB GB8037893A patent/GB2064864B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1149082A (en) | 1983-06-28 |
GB2064864B (en) | 1984-05-23 |
EP0040629A4 (en) | 1984-04-27 |
WO1981001629A1 (en) | 1981-06-11 |
DE3071878D1 (en) | 1987-02-05 |
EP0040629B1 (en) | 1986-12-30 |
EP0040629A1 (en) | 1981-12-02 |
GB2064864A (en) | 1981-06-17 |