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Priority to JP6980275ApriorityCriticalpatent/JPS51145285A/ja
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Publication of JPS5746656B2publicationCriticalpatent/JPS5746656B2/ja
Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees