JPS5743525B2 - - Google Patents
Info
- Publication number
- JPS5743525B2 JPS5743525B2 JP4034875A JP4034875A JPS5743525B2 JP S5743525 B2 JPS5743525 B2 JP S5743525B2 JP 4034875 A JP4034875 A JP 4034875A JP 4034875 A JP4034875 A JP 4034875A JP S5743525 B2 JPS5743525 B2 JP S5743525B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4034875A JPS51116200A (en) | 1975-04-04 | 1975-04-04 | Method for formation of uniform and single phase silicon carbide coati ng |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4034875A JPS51116200A (en) | 1975-04-04 | 1975-04-04 | Method for formation of uniform and single phase silicon carbide coati ng |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51116200A JPS51116200A (en) | 1976-10-13 |
| JPS5743525B2 true JPS5743525B2 (https=) | 1982-09-16 |
Family
ID=12578120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4034875A Granted JPS51116200A (en) | 1975-04-04 | 1975-04-04 | Method for formation of uniform and single phase silicon carbide coati ng |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51116200A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07115998B2 (ja) * | 1987-12-10 | 1995-12-13 | 三井造船株式会社 | 炭化珪素単結晶の製造方法 |
| JPH0489377A (ja) * | 1990-07-27 | 1992-03-23 | Natl Res Inst For Metals | 高強度ＳｉＣ・炭素繊維複合材とその製造方法 |
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1975
- 1975-04-04 JP JP4034875A patent/JPS51116200A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51116200A (en) | 1976-10-13 |