JPS5739152A - Tungsten material for light bulb - Google Patents

Tungsten material for light bulb

Info

Publication number
JPS5739152A
JPS5739152A JP11384480A JP11384480A JPS5739152A JP S5739152 A JPS5739152 A JP S5739152A JP 11384480 A JP11384480 A JP 11384480A JP 11384480 A JP11384480 A JP 11384480A JP S5739152 A JPS5739152 A JP S5739152A
Authority
JP
Japan
Prior art keywords
temp
diameter
high temp
secondary recrystallized
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11384480A
Other languages
Japanese (ja)
Other versions
JPS6119706B2 (en
Inventor
Yasukiyo Otani
Masahiro Tsujikawa
Masao Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11384480A priority Critical patent/JPS5739152A/en
Publication of JPS5739152A publication Critical patent/JPS5739152A/en
Publication of JPS6119706B2 publication Critical patent/JPS6119706B2/ja
Granted legal-status Critical Current

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Landscapes

  • Resistance Heating (AREA)

Abstract

PURPOSE: To obtain a tungsten material for a light bulb with extremely excellent drooping resistance at a high temp. by specifying the relation between a heat treating temp. of doped tungsten containing a specific amount of K and an average diameter of digened voids.
CONSTITUTION: A wiredrawing processing material comprising doped tungsten containing 50ppm or more K is subjected to heat treatment to flatly increase an average diameter D (nm) of aligned voids formed by evaporation of K in regard to a heat treating temp. T(K) as well as a formula is satisfied. If the diameter D satisfies the formula, a secondary recrystallizing temp. is necessarily limited to about 2,100°K or more and, at said sufficiently high temp., elongation of a secondary recrystallized particle is attained. More essentially, aligned voids themselves constituted by the diameter D and an average void interval limited by said diameter D have sufficient movement control force against a secondary recrystallized interface at a high temp. and high temp. stability of a secondary recrystallized texture is enhanced. However, when a K amount, in the W material is below the aforementioned amount sufficient dropping resistance is not obtained.
COPYRIGHT: (C)1982,JPO&Japio
JP11384480A 1980-08-18 1980-08-18 Tungsten material for light bulb Granted JPS5739152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11384480A JPS5739152A (en) 1980-08-18 1980-08-18 Tungsten material for light bulb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11384480A JPS5739152A (en) 1980-08-18 1980-08-18 Tungsten material for light bulb

Publications (2)

Publication Number Publication Date
JPS5739152A true JPS5739152A (en) 1982-03-04
JPS6119706B2 JPS6119706B2 (en) 1986-05-19

Family

ID=14622465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11384480A Granted JPS5739152A (en) 1980-08-18 1980-08-18 Tungsten material for light bulb

Country Status (1)

Country Link
JP (1) JPS5739152A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146235A (en) * 1985-12-19 1987-06-30 Toshiba Corp Tungsten member and its production
US4915746A (en) * 1988-08-15 1990-04-10 Welsch Gerhard E Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures
US5087299A (en) * 1989-04-05 1992-02-11 Kabushiki Kaisha Toshiba Vibration-proof tungsten wire
WO2003031668A1 (en) * 2001-10-09 2003-04-17 Kabushiki Kaisha Toshiba Tunsten wire, cathode heater, and filament for vibration service lamp
WO2020137255A1 (en) * 2018-12-26 2020-07-02 パナソニックＩｐマネジメント株式会社 Tungsten line and saw wire
JPWO2020218058A1 (en) * 2019-04-26 2020-10-29
WO2021256204A1 (en) * 2020-06-19 2021-12-23 パナソニックＩｐマネジメント株式会社 Tungsten wire, saw wire, and tungsten wire for screen printing

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62146235A (en) * 1985-12-19 1987-06-30 Toshiba Corp Tungsten member and its production
US4915746A (en) * 1988-08-15 1990-04-10 Welsch Gerhard E Method of forming high temperature barriers in structural metals to make such metals creep resistant at high homologous temperatures
US5087299A (en) * 1989-04-05 1992-02-11 Kabushiki Kaisha Toshiba Vibration-proof tungsten wire
WO2003031668A1 (en) * 2001-10-09 2003-04-17 Kabushiki Kaisha Toshiba Tunsten wire, cathode heater, and filament for vibration service lamp
CN100426445C (en) * 2001-10-09 2008-10-15 株式会社东芝 Tunsten wire, cathode heater, and filament for vibration service lamp
US9236212B2 (en) 2001-10-09 2016-01-12 Kabushiki Kaisha Toshiba Tungsten wire, cathode heater and vibration service lamp filament
WO2020137255A1 (en) * 2018-12-26 2020-07-02 パナソニックＩｐマネジメント株式会社 Tungsten line and saw wire
JP2020105548A (en) * 2018-12-26 2020-07-09 パナソニックＩｐマネジメント株式会社 Tungsten wire and saw wire
JPWO2020218058A1 (en) * 2019-04-26 2020-10-29
WO2020218058A1 (en) * 2019-04-26 2020-10-29 パナソニックＩｐマネジメント株式会社 Tungsten wire and tungsten product
WO2021256204A1 (en) * 2020-06-19 2021-12-23 パナソニックＩｐマネジメント株式会社 Tungsten wire, saw wire, and tungsten wire for screen printing

Also Published As

Publication number Publication date
JPS6119706B2 (en) 1986-05-19

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