JPS5730468A - Infrared ray image pickup device - Google Patents

Infrared ray image pickup device

Info

Publication number
JPS5730468A
JPS5730468A JP9293081A JP9293081A JPS5730468A JP S5730468 A JPS5730468 A JP S5730468A JP 9293081 A JP9293081 A JP 9293081A JP 9293081 A JP9293081 A JP 9293081A JP S5730468 A JPS5730468 A JP S5730468A
Authority
JP
Japan
Prior art keywords
image pickup
pickup device
infrared ray
ray image
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9293081A
Other languages
English (en)
Other versions
JPH056353B2 (ja
Inventor
Ei Chiyatsupuman Richiyaado
Ei Kinchi Maikuru
Hainesetsuku Jiyarosurabu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5730468A publication Critical patent/JPS5730468A/ja
Publication of JPH056353B2 publication Critical patent/JPH056353B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/33—Transforming infrared radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP9293081A 1980-06-16 1981-06-16 Infrared ray image pickup device Granted JPS5730468A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/159,991 US4327291A (en) 1980-06-16 1980-06-16 Infrared charge injection device imaging system

Publications (2)

Publication Number Publication Date
JPS5730468A true JPS5730468A (en) 1982-02-18
JPH056353B2 JPH056353B2 (ja) 1993-01-26

Family

ID=22575010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9293081A Granted JPS5730468A (en) 1980-06-16 1981-06-16 Infrared ray image pickup device

Country Status (3)

Country Link
US (1) US4327291A (ja)
EP (1) EP0044610A3 (ja)
JP (1) JPS5730468A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431917A (en) * 1981-11-27 1984-02-14 Texas Instruments Incorporated Compact, high cold shield efficiency optical system
US4531055A (en) * 1983-01-05 1985-07-23 The United States Of America As Represented By The Secretary Of The Air Force Self-guarding Schottky barrier infrared detector array
EP0137988B1 (en) * 1983-08-31 1989-11-29 Texas Instruments Incorporated Infrared imager
US4672412A (en) * 1983-11-09 1987-06-09 General Electric Company High fill-factor ac-coupled x-y addressable Schottky photodiode array
US4658277A (en) * 1984-05-17 1987-04-14 Texas Instruments Incorporated Two level charge imaging matrix design with stepped insulator
FR2575602B1 (fr) * 1984-12-27 1987-01-30 Thomson Csf Dispositif photosensible de grand format, et procede d'utilisation
US4654686A (en) * 1985-03-01 1987-03-31 Texas Instruments Incorporated High efficiency MIS detector
US4729005A (en) * 1985-04-29 1988-03-01 General Electric Company Method and apparatus for improved metal-insulator-semiconductor device operation
US6201242B1 (en) 1987-08-05 2001-03-13 Lockheed Martin Corporation Bandgap radiation detector
US5130259A (en) * 1988-08-01 1992-07-14 Northrop Corporation Infrared staring imaging array and method of manufacture
US4970403A (en) * 1988-11-18 1990-11-13 Ltv Aerospace And Defense Company Focal array reimaging system
DE4005494C2 (de) * 1989-02-21 1994-10-20 Canon Kk Halbleiter-Vorrichtung sowie Bildlesegerät mit dieser Halbleitervorrichtung mit optimierten elektrischen Eigenschaften
CA2036874A1 (en) * 1991-02-22 2002-07-10 Ltv Aerospace And Defense Company Bandgap radiation detector and method of fabrication
US5773831A (en) * 1997-03-19 1998-06-30 Lockheed Martin Vought Systems Corporation Patch coupled infrared photodetector
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
US6724010B1 (en) * 2000-08-03 2004-04-20 General Electric Company Solid state imager having gated photodiodes and method for making same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113121A (en) * 1976-03-18 1977-09-22 Sony Corp Electric charge transfer unit
JPS54105917A (en) * 1978-02-08 1979-08-20 Toshiba Corp Solid state pickup device
JPS5576095A (en) * 1978-12-05 1980-06-07 Electroplating Eng Of Japan Co Intermittent feed plating device of coil material

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988613A (en) * 1975-05-02 1976-10-26 General Electric Company Radiation sensing and charge storage devices
US4064533A (en) * 1975-10-24 1977-12-20 Westinghouse Electric Corporation CCD focal plane processor for moving target imaging
CA1098615A (en) * 1975-12-29 1981-03-31 George S. Hopper Ferroelectric imaging system
DE2754549A1 (de) * 1977-12-07 1979-06-13 Siemens Ag Optoelektronischer sensor nach dem prinzip der ladungsinjektion
US4143269A (en) * 1977-12-19 1979-03-06 Texas Instruments Incorporated Ferroelectric imaging system
US4142925A (en) * 1978-04-13 1979-03-06 The United States Of America As Represented By The Secretary Of The Army Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching
US4231149A (en) * 1978-10-10 1980-11-04 Texas Instruments Incorporated Narrow band-gap semiconductor CCD imaging device and method of fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52113121A (en) * 1976-03-18 1977-09-22 Sony Corp Electric charge transfer unit
JPS54105917A (en) * 1978-02-08 1979-08-20 Toshiba Corp Solid state pickup device
JPS5576095A (en) * 1978-12-05 1980-06-07 Electroplating Eng Of Japan Co Intermittent feed plating device of coil material

Also Published As

Publication number Publication date
JPH056353B2 (ja) 1993-01-26
US4327291A (en) 1982-04-27
EP0044610A2 (en) 1982-01-27
EP0044610A3 (en) 1982-08-04

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