Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
  • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
  • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
  • H10D84/617—Combinations of vertical BJTs and only diodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
  • H01L21/743—Making of internal connections, substrate contacts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Electrodes Of Semiconductors (AREA)
• Bipolar Transistors (AREA)
• Bipolar Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=24355851

Family Applications (1)

Country Status (7)

Families Citing this family (17)

Family Cites Families (6)

• 1975
  • 1975-06-20 US US05/588,918 patent/US4005469A/en not_active Expired - Lifetime
• 1976
  • 1976-04-12 IT IT22177/76A patent/IT1064219B/it active
  • 1976-05-06 GB GB18558/76A patent/GB1516034A/en not_active Expired
  • 1976-05-06 FR FR7614187A patent/FR2315171A1/fr active Granted
  • 1976-05-15 DE DE19762621791 patent/DE2621791A1/de not_active Withdrawn
  • 1976-05-19 JP JP51056774A patent/JPS522288A/ja active Granted
  • 1976-06-16 CA CA255,056A patent/CA1041226A/en not_active Expired

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