JPS5724661B2 - - Google Patents

Info

Publication number
JPS5724661B2
JPS5724661B2 JP7184073A JP7184073A JPS5724661B2 JP S5724661 B2 JPS5724661 B2 JP S5724661B2 JP 7184073 A JP7184073 A JP 7184073A JP 7184073 A JP7184073 A JP 7184073A JP S5724661 B2 JPS5724661 B2 JP S5724661B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7184073A
Other versions
JPS4952986A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4952986A publication Critical patent/JPS4952986A/ja
Publication of JPS5724661B2 publication Critical patent/JPS5724661B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0222—Charge pumping, substrate bias generation structures
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP7184073A 1972-06-27 1973-06-27 Expired JPS5724661B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH964472A CH553481A (fr) 1972-06-27 1972-06-27 Ensemble pour polariser le substrat d'un circuit integre.

Publications (2)

Publication Number Publication Date
JPS4952986A JPS4952986A (ja) 1974-05-23
JPS5724661B2 true JPS5724661B2 (ja) 1982-05-25

Family

ID=4354136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7184073A Expired JPS5724661B2 (ja) 1972-06-27 1973-06-27

Country Status (7)

Country Link
US (1) US3845331A (ja)
JP (1) JPS5724661B2 (ja)
CH (1) CH553481A (ja)
DE (1) DE2333777C2 (ja)
FR (1) FR2191276B1 (ja)
GB (1) GB1372679A (ja)
IT (1) IT986599B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922571A (en) * 1974-06-12 1975-11-25 Bell Telephone Labor Inc Semiconductor voltage transformer
US4090095A (en) * 1976-02-17 1978-05-16 Rca Corporation Charge coupled device with diode reset for floating gate output
CH614837B (fr) * 1977-07-08 Ebauches Sa Dispositif pour regler, a une valeur determinee, la tension de seuil de transistors igfet d'un circuit integre par polarisation du substrat d'integration.
JPS5593252A (en) * 1979-01-05 1980-07-15 Mitsubishi Electric Corp Substrate potential generating apparatus
JPS56500108A (ja) * 1979-03-13 1981-02-05
JPS55162257A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor element having substrate bias generator circuit
US4326134A (en) * 1979-08-31 1982-04-20 Xicor, Inc. Integrated rise-time regulated voltage generator systems
US4539490A (en) * 1979-12-08 1985-09-03 Tokyo Shibaura Denki Kabushiki Kaisha Charge pump substrate bias with antiparasitic guard ring
US4468686A (en) * 1981-11-13 1984-08-28 Intersil, Inc. Field terminating structure
DE3681540D1 (de) * 1985-08-26 1991-10-24 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator.
US5006974A (en) * 1987-12-24 1991-04-09 Waferscale Integration Inc. On-chip high voltage generator and regulator in an integrated circuit
US11929674B2 (en) 2021-05-12 2024-03-12 Stmicroelectronics S.R.L. Voltage multiplier circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NIKKEI ELECTRONICS=1972 *

Also Published As

Publication number Publication date
JPS4952986A (ja) 1974-05-23
US3845331A (en) 1974-10-29
FR2191276B1 (ja) 1977-09-16
GB1372679A (en) 1974-11-06
DE2333777C2 (de) 1983-08-25
IT986599B (it) 1975-01-30
FR2191276A1 (ja) 1974-02-01
DE2333777A1 (de) 1974-01-10
CH553481A (fr) 1974-08-30

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