JPS5723354B2 - - Google Patents
Info
- Publication number
- JPS5723354B2 JPS5723354B2 JP14798276A JP14798276A JPS5723354B2 JP S5723354 B2 JPS5723354 B2 JP S5723354B2 JP 14798276 A JP14798276 A JP 14798276A JP 14798276 A JP14798276 A JP 14798276A JP S5723354 B2 JPS5723354 B2 JP S5723354B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14798276A JPS5372429A (en) | 1976-12-09 | 1976-12-09 | Non-volatile semiconductor memory unit |
| GB5053377A GB1544314A (en) | 1976-12-09 | 1977-12-05 | Non-volatile semiconductor memory device |
| DE19772754987 DE2754987C2 (de) | 1976-12-09 | 1977-12-09 | Halbleiter-Speichervorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14798276A JPS5372429A (en) | 1976-12-09 | 1976-12-09 | Non-volatile semiconductor memory unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5372429A JPS5372429A (en) | 1978-06-27 |
| JPS5723354B2 true JPS5723354B2 (xx) | 1982-05-18 |
Family
ID=15442485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14798276A Granted JPS5372429A (en) | 1976-12-09 | 1976-12-09 | Non-volatile semiconductor memory unit |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5372429A (xx) |
| DE (1) | DE2754987C2 (xx) |
| GB (1) | GB1544314A (xx) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55111174A (en) * | 1979-02-21 | 1980-08-27 | Nec Corp | Nonvolatile semiconductor memory device |
| JPS56500109A (xx) * | 1979-03-13 | 1981-02-05 | ||
| US4271487A (en) * | 1979-11-13 | 1981-06-02 | Ncr Corporation | Static volatile/non-volatile ram cell |
| GB2171571B (en) * | 1985-02-27 | 1989-06-14 | Hughes Microelectronics Ltd | Non-volatile memory with predictable failure modes and method of data storage and retrieval |
| US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
| CA1340340C (en) | 1987-06-02 | 1999-01-26 | Joseph T. Evans, Jr. | Non-volatile memory circuit using ferroelectric capacitor storage element |
| US4809225A (en) * | 1987-07-02 | 1989-02-28 | Ramtron Corporation | Memory cell with volatile and non-volatile portions having ferroelectric capacitors |
| US5046043A (en) * | 1987-10-08 | 1991-09-03 | National Semiconductor Corporation | Ferroelectric capacitor and memory cell including barrier and isolation layers |
| US5434811A (en) * | 1987-11-19 | 1995-07-18 | National Semiconductor Corporation | Non-destructive read ferroelectric based memory circuit |
| KR930015015A (ko) * | 1991-12-20 | 1993-07-23 | 윌리엄 이. 힐러 | 강유전성 캐패시터를 갖는 메모리 셀 |
| TW557569B (en) * | 2000-01-24 | 2003-10-11 | Sony Corp | Semiconductor device and manufacturing method thereof |
| US7050323B2 (en) | 2002-08-29 | 2006-05-23 | Texas Instruments Incorporated | Ferroelectric memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48103278A (xx) * | 1972-04-13 | 1973-12-25 | ||
| JPS50106534A (xx) * | 1974-01-29 | 1975-08-22 | ||
| JPS51142928A (en) * | 1975-05-20 | 1976-12-08 | Plessey Handel Investment Ag | Electric information memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3662351A (en) * | 1970-03-30 | 1972-05-09 | Ibm | Alterable-latent image monolithic memory |
-
1976
- 1976-12-09 JP JP14798276A patent/JPS5372429A/ja active Granted
-
1977
- 1977-12-05 GB GB5053377A patent/GB1544314A/en not_active Expired
- 1977-12-09 DE DE19772754987 patent/DE2754987C2/de not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48103278A (xx) * | 1972-04-13 | 1973-12-25 | ||
| JPS50106534A (xx) * | 1974-01-29 | 1975-08-22 | ||
| JPS51142928A (en) * | 1975-05-20 | 1976-12-08 | Plessey Handel Investment Ag | Electric information memory |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2754987C2 (de) | 1984-11-22 |
| JPS5372429A (en) | 1978-06-27 |
| GB1544314A (en) | 1979-04-19 |
| DE2754987A1 (de) | 1978-06-15 |