JPS57204136A - Method of producing semiconductor alloy having desired band gap - Google Patents

Method of producing semiconductor alloy having desired band gap

Info

Publication number
JPS57204136A
JPS57204136A JP57091506A JP9150682A JPS57204136A JP S57204136 A JPS57204136 A JP S57204136A JP 57091506 A JP57091506 A JP 57091506A JP 9150682 A JP9150682 A JP 9150682A JP S57204136 A JPS57204136 A JP S57204136A
Authority
JP
Japan
Prior art keywords
band gap
semiconductor alloy
desired band
producing semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57091506A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525839B2 (enExample
Inventor
Ei Kasutoro Karurosu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS57204136A publication Critical patent/JPS57204136A/ja
Publication of JPH0525839B2 publication Critical patent/JPH0525839B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP57091506A 1981-06-01 1982-05-31 Method of producing semiconductor alloy having desired band gap Granted JPS57204136A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/269,292 US4374678A (en) 1981-06-01 1981-06-01 Process for forming HgCoTe alloys selectively by IR illumination

Publications (2)

Publication Number Publication Date
JPS57204136A true JPS57204136A (en) 1982-12-14
JPH0525839B2 JPH0525839B2 (enExample) 1993-04-14

Family

ID=23026638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57091506A Granted JPS57204136A (en) 1981-06-01 1982-05-31 Method of producing semiconductor alloy having desired band gap

Country Status (2)

Country Link
US (1) US4374678A (enExample)
JP (1) JPS57204136A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184516A (ja) * 1983-04-01 1984-10-19 Sanyo Electric Co Ltd 単結晶薄膜作製方法
JPS61139073A (ja) * 1984-12-10 1986-06-26 Mitsubishi Electric Corp 赤外線検知器の製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0068652B1 (en) * 1981-06-24 1988-05-25 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Photo diodes
US4588446A (en) * 1985-02-21 1986-05-13 Texas Instruments Incorporated Method for producing graded band gap mercury cadmium telluride
US4865923A (en) * 1986-10-09 1989-09-12 Amoco Corporation Selective intermixing of layered structures composed of thin solid films
US5156980A (en) * 1989-03-10 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Method of making a rear surface incident type photodetector
US5264699A (en) * 1991-02-20 1993-11-23 Amber Engineering, Inc. Infrared detector hybrid array with improved thermal cycle reliability and method for making same
US5308980A (en) * 1991-02-20 1994-05-03 Amber Engineering, Inc. Thermal mismatch accommodated infrared detector hybrid array
US5756369A (en) * 1996-07-11 1998-05-26 Lsi Logic Corporation Rapid thermal processing using a narrowband infrared source and feedback
FR2878185B1 (fr) * 2004-11-22 2008-11-07 Sidel Sas Procede de fabrication de recipients comprenant une etape de chauffe au moyen d'un faisceau de rayonnement electromagnetique coherent
US10857722B2 (en) 2004-12-03 2020-12-08 Pressco Ip Llc Method and system for laser-based, wavelength specific infrared irradiation treatment
US7425296B2 (en) * 2004-12-03 2008-09-16 Pressco Technology Inc. Method and system for wavelength specific thermal irradiation and treatment
RU2276428C1 (ru) * 2005-02-16 2006-05-10 Военная академия Ракетных войск стратегического назначения имени Петра Великого Способ коррекции спектральной характеристики полупроводникового фоторезистора лазерным излучением
US7459730B1 (en) 2005-09-20 2008-12-02 Drs Sensors & Targeting Systems, Inc. Separate absorption and detection diode for VLWIR
FR2913210B1 (fr) * 2007-03-02 2009-05-29 Sidel Participations Perfectionnements a la chauffe des matieres plastiques par rayonnement infrarouge
FR2917005B1 (fr) * 2007-06-11 2009-08-28 Sidel Participations Installation de chauffage des corps de preformes pour le soufflage de recipients

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPS53148274A (en) * 1977-05-30 1978-12-23 Hitachi Ltd Production of gaxin(1-x)sb thin film element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113331C (enExample) * 1957-09-03
NL6413441A (enExample) * 1964-11-19 1966-05-20
FR1504497A (fr) * 1966-05-27 1967-12-08 Centre Nat Rech Scient Procédé de traitement d'alliages semi-conducteurs en tellurures de mercure et de cadmium
US3723190A (en) * 1968-10-09 1973-03-27 Honeywell Inc Process for preparing mercury cadmium telluride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52143755A (en) * 1976-05-26 1977-11-30 Hitachi Ltd Laser, zone melting device
JPS53148274A (en) * 1977-05-30 1978-12-23 Hitachi Ltd Production of gaxin(1-x)sb thin film element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184516A (ja) * 1983-04-01 1984-10-19 Sanyo Electric Co Ltd 単結晶薄膜作製方法
JPS61139073A (ja) * 1984-12-10 1986-06-26 Mitsubishi Electric Corp 赤外線検知器の製造方法

Also Published As

Publication number Publication date
JPH0525839B2 (enExample) 1993-04-14
US4374678A (en) 1983-02-22

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