JPS57193059A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS57193059A JPS57193059A JP7594782A JP7594782A JPS57193059A JP S57193059 A JPS57193059 A JP S57193059A JP 7594782 A JP7594782 A JP 7594782A JP 7594782 A JP7594782 A JP 7594782A JP S57193059 A JPS57193059 A JP S57193059A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19813118347 DE3118347A1 (de) | 1981-05-08 | 1981-05-08 | Thyristor mit gategesteuerten mis-fet-strukturen des verarmungstyps und verfahren zu seinem betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57193059A true JPS57193059A (en) | 1982-11-27 |
JPH0142510B2 JPH0142510B2 (US07943777-20110517-C00090.png) | 1989-09-13 |
Family
ID=6131827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7594782A Granted JPS57193059A (en) | 1981-05-08 | 1982-05-06 | Thyristor |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS57193059A (US07943777-20110517-C00090.png) |
DE (1) | DE3118347A1 (US07943777-20110517-C00090.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60180166A (ja) * | 1983-12-30 | 1985-09-13 | ゼネラル・エレクトリツク・カンパニイ | 改良したエミツタ領域を具備しタ−ンオフ能力を持つたサイリスタ及びその製造方法 |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
JPS61125173A (ja) * | 1984-11-22 | 1986-06-12 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3230741A1 (de) * | 1982-08-18 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterschalter mit einem abschaltbaren thyristor |
FR2568724A1 (fr) * | 1984-08-03 | 1986-02-07 | Centre Nat Rech Scient | Composant semi-conducteur de puissance a tension de claquage elevee |
EP0280536B1 (en) * | 1987-02-26 | 1997-05-28 | Kabushiki Kaisha Toshiba | Turn-on driving technique for insulated gate thyristor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5235586A (en) * | 1975-09-12 | 1977-03-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS5245288A (en) * | 1975-06-19 | 1977-04-09 | Asea Ab | Semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (US07943777-20110517-C00090.png) * | 1962-06-11 | |||
DE2825794C2 (de) * | 1978-06-13 | 1986-03-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Abschaltbarer Thyristor |
DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
-
1981
- 1981-05-08 DE DE19813118347 patent/DE3118347A1/de active Granted
-
1982
- 1982-05-06 JP JP7594782A patent/JPS57193059A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5245288A (en) * | 1975-06-19 | 1977-04-09 | Asea Ab | Semiconductor device |
JPS5235586A (en) * | 1975-09-12 | 1977-03-18 | Mitsubishi Electric Corp | Semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60180166A (ja) * | 1983-12-30 | 1985-09-13 | ゼネラル・エレクトリツク・カンパニイ | 改良したエミツタ領域を具備しタ−ンオフ能力を持つたサイリスタ及びその製造方法 |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
JPS61125173A (ja) * | 1984-11-22 | 1986-06-12 | Meidensha Electric Mfg Co Ltd | ゲ−トタ−ンオフサイリスタ |
Also Published As
Publication number | Publication date |
---|---|
DE3118347C2 (US07943777-20110517-C00090.png) | 1990-02-01 |
JPH0142510B2 (US07943777-20110517-C00090.png) | 1989-09-13 |
DE3118347A1 (de) | 1982-11-25 |
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