JPS57187851A - Secondary ion mass analyzing unit - Google Patents

Secondary ion mass analyzing unit

Info

Publication number
JPS57187851A
JPS57187851A JP56072514A JP7251481A JPS57187851A JP S57187851 A JPS57187851 A JP S57187851A JP 56072514 A JP56072514 A JP 56072514A JP 7251481 A JP7251481 A JP 7251481A JP S57187851 A JPS57187851 A JP S57187851A
Authority
JP
Japan
Prior art keywords
light
sample
semitransparent mirror
reflected
receiving face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56072514A
Other languages
Japanese (ja)
Other versions
JPH027510B2 (en
Inventor
Yasubumi Kameshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56072514A priority Critical patent/JPS57187851A/en
Publication of JPS57187851A publication Critical patent/JPS57187851A/en
Publication of JPH027510B2 publication Critical patent/JPH027510B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion

Abstract

PURPOSE:To measure and display an etching depth of a sample under test concurrently with a mass analysis of a measured element during measurement of depth and direction distributions of the density of impurities. CONSTITUTION:Primary ions generated by a duo-plasmatron are scanned electrically and radiated on a sample 2, which is etched in a rectangle with optional sizes. A Michelson interferometer is utilized as an optical system to measure the etching depth. A semiconductor laser capable of generating a light which is subject to interference is used as a light source. A beam from the light source 5 is split in two directions by means of a semitransparent mirror 7, then one of them, as a reference light, is reflected by a reflecting mirror 9, again going through the semitransparent mirror 7, and is converged on a light receiving face of a light detector 12. On the other hand, a distance measuring light 14 goes straight through the semitransparent mirror 7, and after being reflected by a sample etching face 2, again is reflected by the semitransparent mirror 7 and is converged on the light receiving face of the light detector 12. Therefore, every time the light passage difference between the distance measuring light 14 and the reference light 13 reaches an integer multiple of the wave length of the laser light, interference fringes containing brightness and darkness are generated on the light receiving face of the light detector 12 and the etching depth of the sample can be observed on the spot.
JP56072514A 1981-05-14 1981-05-14 Secondary ion mass analyzing unit Granted JPS57187851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072514A JPS57187851A (en) 1981-05-14 1981-05-14 Secondary ion mass analyzing unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072514A JPS57187851A (en) 1981-05-14 1981-05-14 Secondary ion mass analyzing unit

Publications (2)

Publication Number Publication Date
JPS57187851A true JPS57187851A (en) 1982-11-18
JPH027510B2 JPH027510B2 (en) 1990-02-19

Family

ID=13491517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072514A Granted JPS57187851A (en) 1981-05-14 1981-05-14 Secondary ion mass analyzing unit

Country Status (1)

Country Link
JP (1) JPS57187851A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012007832A1 (en) * 2010-07-14 2012-01-19 University Of Cape Town Depth control of laser cutter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012007832A1 (en) * 2010-07-14 2012-01-19 University Of Cape Town Depth control of laser cutter

Also Published As

Publication number Publication date
JPH027510B2 (en) 1990-02-19

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