JPS57187851A - Secondary ion mass analyzing unit - Google Patents
Secondary ion mass analyzing unitInfo
- Publication number
- JPS57187851A JPS57187851A JP56072514A JP7251481A JPS57187851A JP S57187851 A JPS57187851 A JP S57187851A JP 56072514 A JP56072514 A JP 56072514A JP 7251481 A JP7251481 A JP 7251481A JP S57187851 A JPS57187851 A JP S57187851A
- Authority
- JP
- Japan
- Prior art keywords
- light
- sample
- semitransparent mirror
- reflected
- receiving face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
Abstract
PURPOSE:To measure and display an etching depth of a sample under test concurrently with a mass analysis of a measured element during measurement of depth and direction distributions of the density of impurities. CONSTITUTION:Primary ions generated by a duo-plasmatron are scanned electrically and radiated on a sample 2, which is etched in a rectangle with optional sizes. A Michelson interferometer is utilized as an optical system to measure the etching depth. A semiconductor laser capable of generating a light which is subject to interference is used as a light source. A beam from the light source 5 is split in two directions by means of a semitransparent mirror 7, then one of them, as a reference light, is reflected by a reflecting mirror 9, again going through the semitransparent mirror 7, and is converged on a light receiving face of a light detector 12. On the other hand, a distance measuring light 14 goes straight through the semitransparent mirror 7, and after being reflected by a sample etching face 2, again is reflected by the semitransparent mirror 7 and is converged on the light receiving face of the light detector 12. Therefore, every time the light passage difference between the distance measuring light 14 and the reference light 13 reaches an integer multiple of the wave length of the laser light, interference fringes containing brightness and darkness are generated on the light receiving face of the light detector 12 and the etching depth of the sample can be observed on the spot.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56072514A JPS57187851A (en) | 1981-05-14 | 1981-05-14 | Secondary ion mass analyzing unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56072514A JPS57187851A (en) | 1981-05-14 | 1981-05-14 | Secondary ion mass analyzing unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57187851A true JPS57187851A (en) | 1982-11-18 |
JPH027510B2 JPH027510B2 (en) | 1990-02-19 |
Family
ID=13491517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56072514A Granted JPS57187851A (en) | 1981-05-14 | 1981-05-14 | Secondary ion mass analyzing unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57187851A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012007832A1 (en) * | 2010-07-14 | 2012-01-19 | University Of Cape Town | Depth control of laser cutter |
-
1981
- 1981-05-14 JP JP56072514A patent/JPS57187851A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012007832A1 (en) * | 2010-07-14 | 2012-01-19 | University Of Cape Town | Depth control of laser cutter |
Also Published As
Publication number | Publication date |
---|---|
JPH027510B2 (en) | 1990-02-19 |
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