JPS5718712B2 - - Google Patents

Info

Publication number
JPS5718712B2
JPS5718712B2 JP796176A JP796176A JPS5718712B2 JP S5718712 B2 JPS5718712 B2 JP S5718712B2 JP 796176 A JP796176 A JP 796176A JP 796176 A JP796176 A JP 796176A JP S5718712 B2 JPS5718712 B2 JP S5718712B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP796176A
Other languages
Japanese (ja)
Other versions
JPS5291659A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP796176A priority Critical patent/JPS5291659A/ja
Publication of JPS5291659A publication Critical patent/JPS5291659A/ja
Publication of JPS5718712B2 publication Critical patent/JPS5718712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP796176A 1976-01-29 1976-01-29 Semiconductor device Granted JPS5291659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP796176A JPS5291659A (en) 1976-01-29 1976-01-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP796176A JPS5291659A (en) 1976-01-29 1976-01-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5291659A JPS5291659A (en) 1977-08-02
JPS5718712B2 true JPS5718712B2 (enrdf_load_stackoverflow) 1982-04-17

Family

ID=11680066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP796176A Granted JPS5291659A (en) 1976-01-29 1976-01-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5291659A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2756916C2 (de) * 1977-12-21 1985-09-26 Danfoss A/S, Nordborg Vorrichtung zur Einrichtung der Fördermenge einer Wasserwerk-Pumpenanordnung
JPS62241374A (ja) * 1986-11-28 1987-10-22 Semiconductor Res Found 静電誘導サイリスタ
FR2751133B1 (fr) * 1996-07-12 1998-11-06 Sgs Thomson Microelectronics Assemblage monolithique de thyristors a cathode commune

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NIKKEI ELECTRONICS=1975 *

Also Published As

Publication number Publication date
JPS5291659A (en) 1977-08-02

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