JPS5717142A - Non-contact measuring method for semiconductor wafer - Google Patents
Non-contact measuring method for semiconductor waferInfo
- Publication number
- JPS5717142A JPS5717142A JP9067180A JP9067180A JPS5717142A JP S5717142 A JPS5717142 A JP S5717142A JP 9067180 A JP9067180 A JP 9067180A JP 9067180 A JP9067180 A JP 9067180A JP S5717142 A JPS5717142 A JP S5717142A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- change
- resonance
- resonance waveform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To measure the resistivity and the lifetime of a wafer by a method wherein the non-contact detecting element in a loop circuit is placed under a resonating condition and moved close to the semiconductor wafer to be measured and a measurement is performed by the reflected output obtained from the loop circuit. CONSTITUTION:High-frequency power is supplied to a loop 4, the yttrium-iron- garnet (called YIG ball hereinafter) 3 generated resonance of electron spin in a YIG ball 3 by controlling the relating positions of magnets 5 and the center frequency, the bandwidth and the amplitude of a resonance waveform makes a change when the semiconductor wafer W is moved close to the YIG ball 3. Therefore, a relative measurement of a resistivity can be performed based on the change of the resonance waveform generated by the wafer W on a retaining plate 8, and also, by having a constant frequency, the life time of the wafer can be measured from said change of the resonance waveform by performing an ion implantation by irradiating infrared rays on the upper part of the wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9067180A JPS5717142A (en) | 1980-07-04 | 1980-07-04 | Non-contact measuring method for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9067180A JPS5717142A (en) | 1980-07-04 | 1980-07-04 | Non-contact measuring method for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5717142A true JPS5717142A (en) | 1982-01-28 |
Family
ID=14004994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9067180A Pending JPS5717142A (en) | 1980-07-04 | 1980-07-04 | Non-contact measuring method for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717142A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249308A (en) * | 1975-10-15 | 1977-04-20 | Rei Tech Inc | Preventing method of peeling between layers |
JPS538472A (en) * | 1976-07-10 | 1978-01-25 | Girling Ltd | Disk brake |
-
1980
- 1980-07-04 JP JP9067180A patent/JPS5717142A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5249308A (en) * | 1975-10-15 | 1977-04-20 | Rei Tech Inc | Preventing method of peeling between layers |
JPS538472A (en) * | 1976-07-10 | 1978-01-25 | Girling Ltd | Disk brake |
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