JPS5713075B2 - - Google Patents

Info

Publication number
JPS5713075B2
JPS5713075B2 JP3706274A JP3706274A JPS5713075B2 JP S5713075 B2 JPS5713075 B2 JP S5713075B2 JP 3706274 A JP3706274 A JP 3706274A JP 3706274 A JP3706274 A JP 3706274A JP S5713075 B2 JPS5713075 B2 JP S5713075B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3706274A
Other versions
JPS5011341A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5011341A publication Critical patent/JPS5011341A/ja
Publication of JPS5713075B2 publication Critical patent/JPS5713075B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491Virtual ground arrays
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out
JP3706274A 1973-05-04 1974-04-03 Expired JPS5713075B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00357439A US3851317A (en) 1973-05-04 1973-05-04 Double density non-volatile memory array

Publications (2)

Publication Number Publication Date
JPS5011341A JPS5011341A (ja) 1975-02-05
JPS5713075B2 true JPS5713075B2 (ja) 1982-03-15

Family

ID=23405598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3706274A Expired JPS5713075B2 (ja) 1973-05-04 1974-04-03

Country Status (5)

Country Link
US (1) US3851317A (ja)
JP (1) JPS5713075B2 (ja)
DE (1) DE2413804C2 (ja)
FR (1) FR2228272B1 (ja)
GB (1) GB1456114A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133672U (ja) * 1986-02-15 1987-08-22
JPS62155875U (ja) * 1986-03-25 1987-10-03

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103344A (en) * 1976-01-30 1978-07-25 Westinghouse Electric Corp. Method and apparatus for addressing a non-volatile memory array
US4090257A (en) * 1976-06-28 1978-05-16 Westinghouse Electric Corp. Dual mode MNOS memory with paired columns and differential sense circuit
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array
IT1110947B (it) * 1978-01-19 1986-01-13 Sperry Rand Corp Elemento di memoria ad accesso comandato
US4198694A (en) * 1978-03-27 1980-04-15 Hewlett-Packard Company X-Y Addressable memory
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
US4344154A (en) * 1980-02-04 1982-08-10 Texas Instruments Incorporated Programming sequence for electrically programmable memory
JPS6095794A (ja) * 1983-10-28 1985-05-29 Hitachi Ltd 半導体集積回路
NL8802141A (nl) * 1988-08-31 1990-03-16 Philips Nv Geintegreerde halfgeleidergeheugenschakeling met dubbel gebruik van bitlijnen.
JP3304635B2 (ja) * 1994-09-26 2002-07-22 三菱電機株式会社 半導体記憶装置
JP3558510B2 (ja) * 1997-10-30 2004-08-25 シャープ株式会社 不揮発性半導体記憶装置
CN115019859B (zh) * 2015-11-25 2023-10-31 日升存储公司 存储器结构
US10896916B2 (en) 2017-11-17 2021-01-19 Sunrise Memory Corporation Reverse memory cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623023A (en) * 1967-12-01 1971-11-23 Sperry Rand Corp Variable threshold transistor memory using pulse coincident writing
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations
US3618051A (en) * 1969-05-09 1971-11-02 Sperry Rand Corp Nonvolatile read-write memory with addressing
US3651490A (en) * 1969-06-12 1972-03-21 Nippon Electric Co Three dimensional memory utilizing semiconductor memory devices
US3720925A (en) * 1970-10-19 1973-03-13 Rca Corp Memory system using variable threshold transistors
US3699539A (en) * 1970-12-16 1972-10-17 North American Rockwell Bootstrapped inverter memory cell
US3702990A (en) * 1971-02-02 1972-11-14 Rca Corp Variable threshold memory system using minimum amplitude signals
US3728696A (en) * 1971-12-23 1973-04-17 North American Rockwell High density read-only memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133672U (ja) * 1986-02-15 1987-08-22
JPS62155875U (ja) * 1986-03-25 1987-10-03

Also Published As

Publication number Publication date
DE2413804C2 (de) 1983-06-16
JPS5011341A (ja) 1975-02-05
GB1456114A (en) 1976-11-17
FR2228272A1 (ja) 1974-11-29
DE2413804A1 (de) 1974-11-21
US3851317A (en) 1974-11-26
FR2228272B1 (ja) 1977-10-14

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