JPS5713075B2 - - Google Patents

Info

Publication number
JPS5713075B2
JPS5713075B2 JP3706274A JP3706274A JPS5713075B2 JP S5713075 B2 JPS5713075 B2 JP S5713075B2 JP 3706274 A JP3706274 A JP 3706274A JP 3706274 A JP3706274 A JP 3706274A JP S5713075 B2 JPS5713075 B2 JP S5713075B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3706274A
Other languages
Japanese (ja)
Other versions
JPS5011341A (US06589383-20030708-C00041.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5011341A publication Critical patent/JPS5011341A/ja
Publication of JPS5713075B2 publication Critical patent/JPS5713075B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491Virtual ground arrays
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP3706274A 1973-05-04 1974-04-03 Expired JPS5713075B2 (US06589383-20030708-C00041.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00357439A US3851317A (en) 1973-05-04 1973-05-04 Double density non-volatile memory array

Publications (2)

Publication Number Publication Date
JPS5011341A JPS5011341A (US06589383-20030708-C00041.png) 1975-02-05
JPS5713075B2 true JPS5713075B2 (US06589383-20030708-C00041.png) 1982-03-15

Family

ID=23405598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3706274A Expired JPS5713075B2 (US06589383-20030708-C00041.png) 1973-05-04 1974-04-03

Country Status (5)

Country Link
US (1) US3851317A (US06589383-20030708-C00041.png)
JP (1) JPS5713075B2 (US06589383-20030708-C00041.png)
DE (1) DE2413804C2 (US06589383-20030708-C00041.png)
FR (1) FR2228272B1 (US06589383-20030708-C00041.png)
GB (1) GB1456114A (US06589383-20030708-C00041.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133672U (US06589383-20030708-C00041.png) * 1986-02-15 1987-08-22
JPS62155875U (US06589383-20030708-C00041.png) * 1986-03-25 1987-10-03

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103344A (en) * 1976-01-30 1978-07-25 Westinghouse Electric Corp. Method and apparatus for addressing a non-volatile memory array
US4090257A (en) * 1976-06-28 1978-05-16 Westinghouse Electric Corp. Dual mode MNOS memory with paired columns and differential sense circuit
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories
US4198694A (en) * 1978-03-27 1980-04-15 Hewlett-Packard Company X-Y Addressable memory
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
US4344154A (en) * 1980-02-04 1982-08-10 Texas Instruments Incorporated Programming sequence for electrically programmable memory
JPS6095794A (ja) * 1983-10-28 1985-05-29 Hitachi Ltd 半導体集積回路
NL8802141A (nl) * 1988-08-31 1990-03-16 Philips Nv Geintegreerde halfgeleidergeheugenschakeling met dubbel gebruik van bitlijnen.
JP3304635B2 (ja) 1994-09-26 2002-07-22 三菱電機株式会社 半導体記憶装置
JP3558510B2 (ja) * 1997-10-30 2004-08-25 シャープ株式会社 不揮発性半導体記憶装置
JP6867387B2 (ja) * 2015-11-25 2021-04-28 サンライズ メモリー コーポレイション 3次元垂直norフラッシュ薄膜トランジスタストリング
US10896916B2 (en) 2017-11-17 2021-01-19 Sunrise Memory Corporation Reverse memory cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623023A (en) * 1967-12-01 1971-11-23 Sperry Rand Corp Variable threshold transistor memory using pulse coincident writing
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations
US3618051A (en) * 1969-05-09 1971-11-02 Sperry Rand Corp Nonvolatile read-write memory with addressing
US3651490A (en) * 1969-06-12 1972-03-21 Nippon Electric Co Three dimensional memory utilizing semiconductor memory devices
US3720925A (en) * 1970-10-19 1973-03-13 Rca Corp Memory system using variable threshold transistors
US3699539A (en) * 1970-12-16 1972-10-17 North American Rockwell Bootstrapped inverter memory cell
US3702990A (en) * 1971-02-02 1972-11-14 Rca Corp Variable threshold memory system using minimum amplitude signals
US3728696A (en) * 1971-12-23 1973-04-17 North American Rockwell High density read-only memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133672U (US06589383-20030708-C00041.png) * 1986-02-15 1987-08-22
JPS62155875U (US06589383-20030708-C00041.png) * 1986-03-25 1987-10-03

Also Published As

Publication number Publication date
DE2413804C2 (de) 1983-06-16
JPS5011341A (US06589383-20030708-C00041.png) 1975-02-05
FR2228272B1 (US06589383-20030708-C00041.png) 1977-10-14
GB1456114A (en) 1976-11-17
FR2228272A1 (US06589383-20030708-C00041.png) 1974-11-29
US3851317A (en) 1974-11-26
DE2413804A1 (de) 1974-11-21

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