JPS57126188A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS57126188A JPS57126188A JP1058381A JP1058381A JPS57126188A JP S57126188 A JPS57126188 A JP S57126188A JP 1058381 A JP1058381 A JP 1058381A JP 1058381 A JP1058381 A JP 1058381A JP S57126188 A JPS57126188 A JP S57126188A
- Authority
- JP
- Japan
- Prior art keywords
- cores
- lines
- betam
- betan
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a light beam with high power and sharp directivity by a method wherein a plurality of light activated lines are arranged near to each other so as to have mutual coupling in electromagnetic wave in a solid medium consisting of compound semiconductor, and in addition length of these lines are prefered in accordance with a number of lines. CONSTITUTION:In a clad region 1 consisting of solid medium of InGaAsP system, for example five cores 21-25 of active laser medium consisting of InGaAsP system is buried. In this arrangement shapes and measures of cross section of cores 21-25 are selected so as to propagate a fundamental mode of light beam, and taking them in equal lengths in addition, they are placed near to each other with a spacing (d) so as to have a coupling in electromagnetic wave, and cut surfaces are used as end surfaces 3 and 4. In this constitution a length (l) expressed in equations is selected in accordance with the number of cores N, where the length of core (l), the coupling coefficient between adjacent lines is C, the difference between propagation constants is DELTAbeta when the number of cores is two, and when it is 2-5, DELTAbeta=beta1-betam=betan-betam, betan=betam (2<=m<=N-1, propagation constant betan).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1058381A JPS57126188A (en) | 1981-01-27 | 1981-01-27 | Laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1058381A JPS57126188A (en) | 1981-01-27 | 1981-01-27 | Laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57126188A true JPS57126188A (en) | 1982-08-05 |
Family
ID=11754263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1058381A Pending JPS57126188A (en) | 1981-01-27 | 1981-01-27 | Laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57126188A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59208889A (en) * | 1983-05-12 | 1984-11-27 | アメリカン・テレフォン・アンド・テレグラフ・カムパニー | Semiconductor laser |
JPS621289A (en) * | 1985-06-11 | 1987-01-07 | Res Dev Corp Of Japan | Solid-state laser oscillator |
-
1981
- 1981-01-27 JP JP1058381A patent/JPS57126188A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59208889A (en) * | 1983-05-12 | 1984-11-27 | アメリカン・テレフォン・アンド・テレグラフ・カムパニー | Semiconductor laser |
JPS621289A (en) * | 1985-06-11 | 1987-01-07 | Res Dev Corp Of Japan | Solid-state laser oscillator |
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