JPS5712312B2 - - Google Patents

Info

Publication number
JPS5712312B2
JPS5712312B2 JP6513979A JP6513979A JPS5712312B2 JP S5712312 B2 JPS5712312 B2 JP S5712312B2 JP 6513979 A JP6513979 A JP 6513979A JP 6513979 A JP6513979 A JP 6513979A JP S5712312 B2 JPS5712312 B2 JP S5712312B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6513979A
Other languages
Japanese (ja)
Other versions
JPS55157281A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6513979A priority Critical patent/JPS55157281A/en
Publication of JPS55157281A publication Critical patent/JPS55157281A/en
Publication of JPS5712312B2 publication Critical patent/JPS5712312B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP6513979A 1979-05-25 1979-05-25 Semiconductor light emitting device Granted JPS55157281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6513979A JPS55157281A (en) 1979-05-25 1979-05-25 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6513979A JPS55157281A (en) 1979-05-25 1979-05-25 Semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS55157281A JPS55157281A (en) 1980-12-06
JPS5712312B2 true JPS5712312B2 (en) 1982-03-10

Family

ID=13278248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6513979A Granted JPS55157281A (en) 1979-05-25 1979-05-25 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS55157281A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962080U (en) * 1982-10-20 1984-04-23 トヨタ自動車株式会社 Engine under cover structure
JPS61179175U (en) * 1985-04-30 1986-11-08

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4359774A (en) * 1980-11-04 1982-11-16 Rca Corporation Light emitting device
JPS6064488A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JPS6064491A (en) * 1983-09-19 1985-04-13 Rohm Co Ltd Semiconductor laser and manufacture thereof
JP2584606B2 (en) * 1983-09-19 1997-02-26 ロ−ム 株式会社 Semiconductor laser
JP2584607B2 (en) * 1983-09-19 1997-02-26 ロ−ム 株式会社 Semiconductor laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (en) * 1973-12-10 1975-07-17
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088989A (en) * 1973-12-10 1975-07-17
JPS51147985A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Method of manufacturing a semiconductor light emission device
JPS5320786A (en) * 1976-08-10 1978-02-25 Nec Corp Injection type semiconductor laser element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5962080U (en) * 1982-10-20 1984-04-23 トヨタ自動車株式会社 Engine under cover structure
JPS61179175U (en) * 1985-04-30 1986-11-08

Also Published As

Publication number Publication date
JPS55157281A (en) 1980-12-06

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