JPS57118630A - Evaporating device - Google Patents

Evaporating device

Info

Publication number
JPS57118630A
JPS57118630A JP56005267A JP526781A JPS57118630A JP S57118630 A JPS57118630 A JP S57118630A JP 56005267 A JP56005267 A JP 56005267A JP 526781 A JP526781 A JP 526781A JP S57118630 A JPS57118630 A JP S57118630A
Authority
JP
Japan
Prior art keywords
fine particles
detected
pulse
reaction space
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56005267A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0474857B2 (enrdf_load_stackoverflow
Inventor
Kiyohiro Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56005267A priority Critical patent/JPS57118630A/ja
Publication of JPS57118630A publication Critical patent/JPS57118630A/ja
Publication of JPH0474857B2 publication Critical patent/JPH0474857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP56005267A 1981-01-16 1981-01-16 Evaporating device Granted JPS57118630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56005267A JPS57118630A (en) 1981-01-16 1981-01-16 Evaporating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005267A JPS57118630A (en) 1981-01-16 1981-01-16 Evaporating device

Publications (2)

Publication Number Publication Date
JPS57118630A true JPS57118630A (en) 1982-07-23
JPH0474857B2 JPH0474857B2 (enrdf_load_stackoverflow) 1992-11-27

Family

ID=11606448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005267A Granted JPS57118630A (en) 1981-01-16 1981-01-16 Evaporating device

Country Status (1)

Country Link
JP (1) JPS57118630A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216515A (ja) * 1985-07-16 1987-01-24 Ulvac Corp プラズマ装置用監視装置
US6576559B2 (en) 1998-03-04 2003-06-10 Hitachi, Ltd. Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses
US6613588B2 (en) 1999-03-02 2003-09-02 Hitachi, Ltd. Floating particle inspection method and its apparatus and a semiconductor device processing apparatus
US6712928B2 (en) 2000-08-07 2004-03-30 Hitachi, Ltd. Method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device
US6778272B2 (en) 1999-03-02 2004-08-17 Renesas Technology Corp. Method of processing a semiconductor device
US7175875B2 (en) 2002-02-15 2007-02-13 Hitachi, Ltd. Method and apparatus for plasma processing
US7355143B1 (en) 1999-01-11 2008-04-08 Hitachi, Ltd. Circuit board production method and its apparatus
WO2011127370A1 (en) * 2010-04-09 2011-10-13 First Solar, Inc. Particle detector
CN115440557A (zh) * 2021-06-01 2022-12-06 中微半导体设备(上海)股份有限公司 等离子体处理装置和颗粒污染物的监测方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146957A (en) * 1978-05-10 1979-11-16 Hitachi Ltd Doping gas cntrol method in semiconductor process
JPS5518783A (en) * 1978-07-25 1980-02-09 Sharp Corp Electronic apparatus with function of counting number of issued slip

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146957A (en) * 1978-05-10 1979-11-16 Hitachi Ltd Doping gas cntrol method in semiconductor process
JPS5518783A (en) * 1978-07-25 1980-02-09 Sharp Corp Electronic apparatus with function of counting number of issued slip

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216515A (ja) * 1985-07-16 1987-01-24 Ulvac Corp プラズマ装置用監視装置
US6576559B2 (en) 1998-03-04 2003-06-10 Hitachi, Ltd. Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses
US7355143B1 (en) 1999-01-11 2008-04-08 Hitachi, Ltd. Circuit board production method and its apparatus
US6613588B2 (en) 1999-03-02 2003-09-02 Hitachi, Ltd. Floating particle inspection method and its apparatus and a semiconductor device processing apparatus
US6778272B2 (en) 1999-03-02 2004-08-17 Renesas Technology Corp. Method of processing a semiconductor device
US6712928B2 (en) 2000-08-07 2004-03-30 Hitachi, Ltd. Method and its apparatus for detecting floating particles in a plasma processing chamber and an apparatus for processing a semiconductor device
US7175875B2 (en) 2002-02-15 2007-02-13 Hitachi, Ltd. Method and apparatus for plasma processing
WO2011127370A1 (en) * 2010-04-09 2011-10-13 First Solar, Inc. Particle detector
US8472021B2 (en) 2010-04-09 2013-06-25 First Solar, Inc. Particle detector
CN115440557A (zh) * 2021-06-01 2022-12-06 中微半导体设备(上海)股份有限公司 等离子体处理装置和颗粒污染物的监测方法
CN115440557B (zh) * 2021-06-01 2025-05-09 中微半导体设备(上海)股份有限公司 等离子体处理装置和颗粒污染物的监测方法

Also Published As

Publication number Publication date
JPH0474857B2 (enrdf_load_stackoverflow) 1992-11-27

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