JPS57111026A - Exposure device for electron beam - Google Patents

Exposure device for electron beam

Info

Publication number
JPS57111026A
JPS57111026A JP18894980A JP18894980A JPS57111026A JP S57111026 A JPS57111026 A JP S57111026A JP 18894980 A JP18894980 A JP 18894980A JP 18894980 A JP18894980 A JP 18894980A JP S57111026 A JPS57111026 A JP S57111026A
Authority
JP
Japan
Prior art keywords
irradiation
data
pattern
indexes
pattern element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18894980A
Other languages
Japanese (ja)
Other versions
JPH023535B2 (en
Inventor
Akihira Fujinami
Korehito Matsuda
Shigeru Moriya
Susumu Ozasa
Tadakatsu Ishiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP18894980A priority Critical patent/JPS57111026A/en
Publication of JPS57111026A publication Critical patent/JPS57111026A/en
Publication of JPH023535B2 publication Critical patent/JPH023535B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To give the optimum quantity of irradiation to each pattern element, and to prevent the increase of pattern data by affording indexes indicating the quantity of electron beams irradiated to each pattern element and giving the quantity of irradiation to each pattern element while referring to a table on the basis of the indexes. CONSTITUTION:A logic circuit 103 decodes the pattern data 201-209, the addresses of the beam irradiation quantity table 102 are formed from the indexes of the quantity of irradiation, irradiation quantity data 211-219 are read, and the quantity of irradiation is set. Accordingly, the quantity of data is halved as compared to the case when directly designating the quantity of irradiation, and the beam irradiation quantity table 102 may be replaced with records corresponding to resists used and the intensity of beams and the pattern data 101 need not be changed even when the resists differ.
JP18894980A 1980-12-26 1980-12-26 Exposure device for electron beam Granted JPS57111026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18894980A JPS57111026A (en) 1980-12-26 1980-12-26 Exposure device for electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18894980A JPS57111026A (en) 1980-12-26 1980-12-26 Exposure device for electron beam

Publications (2)

Publication Number Publication Date
JPS57111026A true JPS57111026A (en) 1982-07-10
JPH023535B2 JPH023535B2 (en) 1990-01-24

Family

ID=16232729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18894980A Granted JPS57111026A (en) 1980-12-26 1980-12-26 Exposure device for electron beam

Country Status (1)

Country Link
JP (1) JPS57111026A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015002189A (en) * 2013-06-13 2015-01-05 株式会社ニューフレアテクノロジー Multi-charged particle beam lithography method and multi-charged particle beam lithography apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021020187A1 (en) * 2019-07-26 2021-02-04 知明 久慈 Medical system, medical device and medical program

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721822A (en) * 1980-07-16 1982-02-04 Jeol Ltd Exposing method for electron beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721822A (en) * 1980-07-16 1982-02-04 Jeol Ltd Exposing method for electron beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015002189A (en) * 2013-06-13 2015-01-05 株式会社ニューフレアテクノロジー Multi-charged particle beam lithography method and multi-charged particle beam lithography apparatus

Also Published As

Publication number Publication date
JPH023535B2 (en) 1990-01-24

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