JPS5710511B2 - - Google Patents

Info

Publication number
JPS5710511B2
JPS5710511B2 JP14863774A JP14863774A JPS5710511B2 JP S5710511 B2 JPS5710511 B2 JP S5710511B2 JP 14863774 A JP14863774 A JP 14863774A JP 14863774 A JP14863774 A JP 14863774A JP S5710511 B2 JPS5710511 B2 JP S5710511B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14863774A
Other versions
JPS5176937A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14863774A priority Critical patent/JPS5710511B2/ja
Priority to US05/643,757 priority patent/US4031412A/en
Priority to DE19752558489 priority patent/DE2558489A1/de
Priority to CA242,589A priority patent/CA1052908A/en
Priority to AU87940/75A priority patent/AU486170B2/en
Publication of JPS5176937A publication Critical patent/JPS5176937A/ja
Publication of JPS5710511B2 publication Critical patent/JPS5710511B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP14863774A 1974-12-27 1974-12-27 Expired JPS5710511B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14863774A JPS5710511B2 (ja) 1974-12-27 1974-12-27
US05/643,757 US4031412A (en) 1974-12-27 1975-12-23 Memory circuit
DE19752558489 DE2558489A1 (de) 1974-12-27 1975-12-24 Speicher
CA242,589A CA1052908A (en) 1974-12-27 1975-12-24 Semiconductor memory element operable at high speed and with low power consumption
AU87940/75A AU486170B2 (en) 1974-12-27 1975-12-30 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14863774A JPS5710511B2 (ja) 1974-12-27 1974-12-27

Publications (2)

Publication Number Publication Date
JPS5176937A JPS5176937A (ja) 1976-07-03
JPS5710511B2 true JPS5710511B2 (ja) 1982-02-26

Family

ID=15457235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14863774A Expired JPS5710511B2 (ja) 1974-12-27 1974-12-27

Country Status (4)

Country Link
US (1) US4031412A (ja)
JP (1) JPS5710511B2 (ja)
CA (1) CA1052908A (ja)
DE (1) DE2558489A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5455361A (en) * 1977-10-13 1979-05-02 Hitachi Ltd Semiconductor switch circuit
GB8621357D0 (en) * 1986-09-04 1986-10-15 Mcallister R I Hinged barrier semiconductor integrated circuits
US4742249A (en) * 1986-11-25 1988-05-03 Rca Licensing Corporation RF switch with diode network and control latch sharing common element
US5107507A (en) * 1988-05-26 1992-04-21 International Business Machines Bidirectional buffer with latch and parity capability
US5173619A (en) * 1988-05-26 1992-12-22 International Business Machines Corporation Bidirectional buffer with latch and parity capability
US6229161B1 (en) * 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6690038B1 (en) 1999-06-05 2004-02-10 T-Ram, Inc. Thyristor-based device over substrate surface
US7456439B1 (en) 2001-03-22 2008-11-25 T-Ram Semiconductor, Inc. Vertical thyristor-based memory with trench isolation and its method of fabrication
US6727528B1 (en) 2001-03-22 2004-04-27 T-Ram, Inc. Thyristor-based device including trench dielectric isolation for thyristor-body regions
EP1384232A4 (en) * 2001-04-05 2008-11-19 T Ram Inc DYNAMIC DATA RESTORATION IN A THYRISTOR MEMORY DEVICE
US6965129B1 (en) 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US6944051B1 (en) 2003-10-29 2005-09-13 T-Ram, Inc. Data restore in thryistor based memory devices
US9269422B2 (en) * 2013-09-30 2016-02-23 Simon Peter Tsaoussis Two transistor ternary random access memory

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105158A (en) * 1960-06-29 1963-09-24 Daystrom Inc Step counter having storage capacitor discharge through tranistor driven to saturation with diode regenerative feedback
US3343104A (en) * 1964-07-30 1967-09-19 Westinghouse Electric Corp Gate turn-off device driving a power switching semiconductor device
US3569945A (en) * 1969-01-06 1971-03-09 Ibm Low power semiconductor diode signal storage device

Also Published As

Publication number Publication date
US4031412A (en) 1977-06-21
DE2558489C3 (ja) 1979-10-25
AU8794075A (en) 1977-07-07
CA1052908A (en) 1979-04-17
JPS5176937A (ja) 1976-07-03
DE2558489A1 (de) 1976-07-15
DE2558489B2 (ja) 1979-03-01

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