JPS5710261A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5710261A JPS5710261A JP8474780A JP8474780A JPS5710261A JP S5710261 A JPS5710261 A JP S5710261A JP 8474780 A JP8474780 A JP 8474780A JP 8474780 A JP8474780 A JP 8474780A JP S5710261 A JPS5710261 A JP S5710261A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- circuit
- terminal
- potential
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/311—Design considerations for internal polarisation in bipolar devices
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8474780A JPS5710261A (en) | 1980-06-23 | 1980-06-23 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8474780A JPS5710261A (en) | 1980-06-23 | 1980-06-23 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710261A true JPS5710261A (en) | 1982-01-19 |
| JPH0147899B2 JPH0147899B2 (enExample) | 1989-10-17 |
Family
ID=13839278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8474780A Granted JPS5710261A (en) | 1980-06-23 | 1980-06-23 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5710261A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168752A (ja) * | 1982-03-29 | 1983-10-05 | 清水建設株式会社 | れんが造建築物 |
| JPS6065854A (ja) * | 1983-09-21 | 1985-04-15 | スパンクリ−ト製造株式会社 | コンクリ−トスラブの構築方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934729A (enExample) * | 1972-08-02 | 1974-03-30 | ||
| JPS5056183A (enExample) * | 1973-09-14 | 1975-05-16 |
-
1980
- 1980-06-23 JP JP8474780A patent/JPS5710261A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4934729A (enExample) * | 1972-08-02 | 1974-03-30 | ||
| JPS5056183A (enExample) * | 1973-09-14 | 1975-05-16 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168752A (ja) * | 1982-03-29 | 1983-10-05 | 清水建設株式会社 | れんが造建築物 |
| JPS6065854A (ja) * | 1983-09-21 | 1985-04-15 | スパンクリ−ト製造株式会社 | コンクリ−トスラブの構築方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0147899B2 (enExample) | 1989-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4365172A (en) | High current static MOS driver circuit with low DC power dissipation | |
| SE441559B (sv) | Fasttillstandsomkopplare | |
| US4246502A (en) | Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom | |
| US5397931A (en) | Voltage multiplier | |
| US3394268A (en) | Logic switching circuit | |
| EP0623951B1 (en) | A semiconductor device in a thin active layer with high breakdown voltage | |
| US4259600A (en) | Integrated insulated-gate field-effect transistor control device | |
| JPH0210678Y2 (enExample) | ||
| US12230627B2 (en) | Semiconductor device | |
| US6198337B1 (en) | Semiconductor device for outputting a reference voltage, a crystal oscillator device comprising the same, and a method of producing the crystal oscillator device | |
| US5828308A (en) | Current sensing circuit formed in narrow area and having sensing electrode on major surface of semiconductor substrate | |
| US5432377A (en) | Dielectrically isolated semiconductor device and a method for its manufacture | |
| NO970311L (no) | Kvartsoscillator av temperaturkompensasjonstypen | |
| US4112670A (en) | Electronic timepiece | |
| JPS5710261A (en) | Semiconductor integrated circuit | |
| US5047675A (en) | Circuit device, made up of a reduced number of components, for simultaneously turning on a plurality of power transistors | |
| GB1477467A (en) | Analogue memory circuits | |
| US6861880B2 (en) | Driving circuit for push-pull operated transistors | |
| US6229405B1 (en) | Low-voltage oscillation amplifying circuit | |
| US4374332A (en) | Cascade type CMOS semiconductor device | |
| US4329700A (en) | Semi-conductor inverter using complementary junction field effect transistor pair | |
| JPS56159891A (en) | Semiconductor integrated circuit device | |
| EP0013117B1 (en) | A mos dynamic logic circuit | |
| JPS561573A (en) | Semiconductor nonvolatile memory | |
| JPS56150849A (en) | Semiconductor integratd circuit device |