JPS5710261A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5710261A
JPS5710261A JP8474780A JP8474780A JPS5710261A JP S5710261 A JPS5710261 A JP S5710261A JP 8474780 A JP8474780 A JP 8474780A JP 8474780 A JP8474780 A JP 8474780A JP S5710261 A JPS5710261 A JP S5710261A
Authority
JP
Japan
Prior art keywords
substrate
circuit
terminal
potential
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8474780A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0147899B2 (enExample
Inventor
Yuji Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8474780A priority Critical patent/JPS5710261A/ja
Publication of JPS5710261A publication Critical patent/JPS5710261A/ja
Publication of JPH0147899B2 publication Critical patent/JPH0147899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/311Design considerations for internal polarisation in bipolar devices

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP8474780A 1980-06-23 1980-06-23 Semiconductor integrated circuit Granted JPS5710261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8474780A JPS5710261A (en) 1980-06-23 1980-06-23 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8474780A JPS5710261A (en) 1980-06-23 1980-06-23 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5710261A true JPS5710261A (en) 1982-01-19
JPH0147899B2 JPH0147899B2 (enExample) 1989-10-17

Family

ID=13839278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8474780A Granted JPS5710261A (en) 1980-06-23 1980-06-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5710261A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168752A (ja) * 1982-03-29 1983-10-05 清水建設株式会社 れんが造建築物
JPS6065854A (ja) * 1983-09-21 1985-04-15 スパンクリ−ト製造株式会社 コンクリ−トスラブの構築方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934729A (enExample) * 1972-08-02 1974-03-30
JPS5056183A (enExample) * 1973-09-14 1975-05-16

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934729A (enExample) * 1972-08-02 1974-03-30
JPS5056183A (enExample) * 1973-09-14 1975-05-16

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168752A (ja) * 1982-03-29 1983-10-05 清水建設株式会社 れんが造建築物
JPS6065854A (ja) * 1983-09-21 1985-04-15 スパンクリ−ト製造株式会社 コンクリ−トスラブの構築方法

Also Published As

Publication number Publication date
JPH0147899B2 (enExample) 1989-10-17

Similar Documents

Publication Publication Date Title
US4365172A (en) High current static MOS driver circuit with low DC power dissipation
SE441559B (sv) Fasttillstandsomkopplare
US4246502A (en) Means for coupling incompatible signals to an integrated circuit and for deriving operating supply therefrom
US5397931A (en) Voltage multiplier
US3394268A (en) Logic switching circuit
EP0623951B1 (en) A semiconductor device in a thin active layer with high breakdown voltage
US4259600A (en) Integrated insulated-gate field-effect transistor control device
JPH0210678Y2 (enExample)
US12230627B2 (en) Semiconductor device
US6198337B1 (en) Semiconductor device for outputting a reference voltage, a crystal oscillator device comprising the same, and a method of producing the crystal oscillator device
US5828308A (en) Current sensing circuit formed in narrow area and having sensing electrode on major surface of semiconductor substrate
US5432377A (en) Dielectrically isolated semiconductor device and a method for its manufacture
NO970311L (no) Kvartsoscillator av temperaturkompensasjonstypen
US4112670A (en) Electronic timepiece
JPS5710261A (en) Semiconductor integrated circuit
US5047675A (en) Circuit device, made up of a reduced number of components, for simultaneously turning on a plurality of power transistors
GB1477467A (en) Analogue memory circuits
US6861880B2 (en) Driving circuit for push-pull operated transistors
US6229405B1 (en) Low-voltage oscillation amplifying circuit
US4374332A (en) Cascade type CMOS semiconductor device
US4329700A (en) Semi-conductor inverter using complementary junction field effect transistor pair
JPS56159891A (en) Semiconductor integrated circuit device
EP0013117B1 (en) A mos dynamic logic circuit
JPS561573A (en) Semiconductor nonvolatile memory
JPS56150849A (en) Semiconductor integratd circuit device