JPS5710261A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5710261A
JPS5710261A JP8474780A JP8474780A JPS5710261A JP S5710261 A JPS5710261 A JP S5710261A JP 8474780 A JP8474780 A JP 8474780A JP 8474780 A JP8474780 A JP 8474780A JP S5710261 A JPS5710261 A JP S5710261A
Authority
JP
Japan
Prior art keywords
substrate
circuit
terminal
potential
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8474780A
Other languages
Japanese (ja)
Other versions
JPH0147899B2 (en
Inventor
Yuji Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8474780A priority Critical patent/JPS5710261A/en
Publication of JPS5710261A publication Critical patent/JPS5710261A/en
Publication of JPH0147899B2 publication Critical patent/JPH0147899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the power consumption in an AC driving circuit, in a circuit wherein each element is separated and insulated in an island shaped region in a substrate, by giving a potential to a reference potential point in the circuit without passing the substrate, and providing bias to the substrate via a forward-direction diode. CONSTITUTION:For example, an N type epitaxial layer provided in the P type substrate 10 is separated by, e.g., P<+> layer. Transistors Q1 and Q2 are formed in the island shaped regions 11 and 12, and, e.g., an IC for an AC plasma display driver is constituted. The ground potential, which is not related to the substrate 10, is given to a grounding terminal of said IC. A negative power source -Vs(about -1V) is connected to a terminal 4 of the substrate 10 via a terminal 6 and a diode D1. The substrate potential during the operation is determined by capacities C1 and C2 between the regions 11 and 12 and the substrate 10 and the capacity of the diode D1, and varies with the signal voltage inputted from a terminal 1. However, the maximum value can be specified below the minimum potential of the circuit. In this constitution, the current required to charge or discharge the capacitors C1 and C2 can be decreased, and the power consumption in the circuit can be reduced.
JP8474780A 1980-06-23 1980-06-23 Semiconductor integrated circuit Granted JPS5710261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8474780A JPS5710261A (en) 1980-06-23 1980-06-23 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8474780A JPS5710261A (en) 1980-06-23 1980-06-23 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5710261A true JPS5710261A (en) 1982-01-19
JPH0147899B2 JPH0147899B2 (en) 1989-10-17

Family

ID=13839278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8474780A Granted JPS5710261A (en) 1980-06-23 1980-06-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5710261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168752A (en) * 1982-03-29 1983-10-05 清水建設株式会社 Brick building
JPS6065854A (en) * 1983-09-21 1985-04-15 スパンクリ−ト製造株式会社 Concrete slab and its construction

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934729A (en) * 1972-08-02 1974-03-30
JPS5056183A (en) * 1973-09-14 1975-05-16

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4934729A (en) * 1972-08-02 1974-03-30
JPS5056183A (en) * 1973-09-14 1975-05-16

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168752A (en) * 1982-03-29 1983-10-05 清水建設株式会社 Brick building
JPH0231187B2 (en) * 1982-03-29 1990-07-11 Shimizu Construction Co Ltd
JPS6065854A (en) * 1983-09-21 1985-04-15 スパンクリ−ト製造株式会社 Concrete slab and its construction
JPS6250619B2 (en) * 1983-09-21 1987-10-26 Supankuriito Seizo Kk

Also Published As

Publication number Publication date
JPH0147899B2 (en) 1989-10-17

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