JPS57100732A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS57100732A JPS57100732A JP17791980A JP17791980A JPS57100732A JP S57100732 A JPS57100732 A JP S57100732A JP 17791980 A JP17791980 A JP 17791980A JP 17791980 A JP17791980 A JP 17791980A JP S57100732 A JPS57100732 A JP S57100732A
- Authority
- JP
- Japan
- Prior art keywords
- trap
- chamber
- drain pipe
- dry etching
- etching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To eliminate a defect adhered to an etched material by heating the inner wall and drain pipe of a chamber and forming a trap at a drain pump, thereby adsorbing all the reactive products to the trap. CONSTITUTION:Since the inner wall and drain pipe 3 of a chamber 1 are heated, reactive product or sludge of photoresist are not readhered thereto but are always conveyed to a trap 4 and are adsorbed to the trap 4. In this manner, the reactive product and the sludge of the resist thus adsorbed to the trap can not be again raised through the drain pipe to be scattered in the chamber, thereby eliminating the defect at the etched material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17791980A JPS57100732A (en) | 1980-12-16 | 1980-12-16 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17791980A JPS57100732A (en) | 1980-12-16 | 1980-12-16 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57100732A true JPS57100732A (en) | 1982-06-23 |
Family
ID=16039353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17791980A Pending JPS57100732A (en) | 1980-12-16 | 1980-12-16 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57100732A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62107439U (en) * | 1985-12-25 | 1987-07-09 | ||
| JPH0215623A (en) * | 1988-04-25 | 1990-01-19 | Applied Materials Inc | Magnetic field enhancing plasma etching reactor |
| JPH0291277U (en) * | 1988-12-28 | 1990-07-19 | ||
| JPH0472724A (en) * | 1990-07-13 | 1992-03-06 | Sony Corp | Dryetching process |
| JP4459297B1 (en) * | 2009-12-25 | 2010-04-28 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus, valve apparatus, CVD processing method using semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| JP2010116627A (en) * | 2009-12-25 | 2010-05-27 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment, valve device, cvd treatment method using the semiconductor manufacturing equipment, and method of manufacturing semiconductor |
| JP2010189767A (en) * | 2010-04-15 | 2010-09-02 | Hitachi Kokusai Electric Inc | Apparatus for manufacturing semiconductor, valve device, cvd treatment method using valve device, and method of manufacturing semiconductor |
-
1980
- 1980-12-16 JP JP17791980A patent/JPS57100732A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62107439U (en) * | 1985-12-25 | 1987-07-09 | ||
| JPH0528757Y2 (en) * | 1985-12-25 | 1993-07-23 | ||
| JPH0215623A (en) * | 1988-04-25 | 1990-01-19 | Applied Materials Inc | Magnetic field enhancing plasma etching reactor |
| JPH0291277U (en) * | 1988-12-28 | 1990-07-19 | ||
| JPH0444948Y2 (en) * | 1988-12-28 | 1992-10-22 | ||
| JPH0472724A (en) * | 1990-07-13 | 1992-03-06 | Sony Corp | Dryetching process |
| JP4459297B1 (en) * | 2009-12-25 | 2010-04-28 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus, valve apparatus, CVD processing method using semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| JP2010116627A (en) * | 2009-12-25 | 2010-05-27 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment, valve device, cvd treatment method using the semiconductor manufacturing equipment, and method of manufacturing semiconductor |
| JP2010159492A (en) * | 2009-12-25 | 2010-07-22 | Hitachi Kokusai Electric Inc | Semiconductor production apparatus and valve apparatus, and cvd processing method and method for producing semiconductor using the semiconductor production apparatus |
| JP4523071B2 (en) * | 2009-12-25 | 2010-08-11 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus, valve apparatus, CVD processing method using semiconductor manufacturing apparatus, and semiconductor manufacturing method |
| JP2010189767A (en) * | 2010-04-15 | 2010-09-02 | Hitachi Kokusai Electric Inc | Apparatus for manufacturing semiconductor, valve device, cvd treatment method using valve device, and method of manufacturing semiconductor |
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