JPS5690575A - Coaxial diode - Google Patents
Coaxial diodeInfo
- Publication number
- JPS5690575A JPS5690575A JP16794179A JP16794179A JPS5690575A JP S5690575 A JPS5690575 A JP S5690575A JP 16794179 A JP16794179 A JP 16794179A JP 16794179 A JP16794179 A JP 16794179A JP S5690575 A JPS5690575 A JP S5690575A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- cause
- parallel
- header
- relation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
PURPOSE:To provide p-n junction plane of a thick chip in parallel with a header surface by a method wherein a height of a diode chip, side length, a diametral length of the end surface or side surface thereof are kept at a desired relation. CONSTITUTION:Side length of the end surface of the chip 4 is W, and a height of the chip is H, 2<1/2> W<D<(H<2>+W<2>)<1/2> should be required so as to cause the chip to be placed in a glass pipe (its inner diameter is D) and to cause the planes of headers 5 and 6 to be in parallel with p-n junction plane 7. A relation of HW/(H<2>+ W<2>)<1/2>>d/2 should be kept so as to cause the inclined chip to be recovered in the pipe, where a distance between the vertical walls A and B is d. When this relation is fulfilled, even if the chip is dropped into the glass tube 1 with being inclined therein, the chip 4 may recover from its inclined condition with the surface of the header 5, resulting in that the p-n junction plane is set to be parallel with the header surface. Thereafter, a thick chip may be used to expand its bright surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16794179A JPS5690575A (en) | 1979-12-24 | 1979-12-24 | Coaxial diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16794179A JPS5690575A (en) | 1979-12-24 | 1979-12-24 | Coaxial diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690575A true JPS5690575A (en) | 1981-07-22 |
Family
ID=15858883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16794179A Pending JPS5690575A (en) | 1979-12-24 | 1979-12-24 | Coaxial diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690575A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1070288A (en) * | 1996-07-23 | 1998-03-10 | Zowie Technol Corp | Silicon semiconductor diode chip having full-open p-n junction subjected to passivation with glass, and fabrication thereof |
-
1979
- 1979-12-24 JP JP16794179A patent/JPS5690575A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1070288A (en) * | 1996-07-23 | 1998-03-10 | Zowie Technol Corp | Silicon semiconductor diode chip having full-open p-n junction subjected to passivation with glass, and fabrication thereof |
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