JPS5685873A - Schottky barrier diode element - Google Patents
Schottky barrier diode elementInfo
- Publication number
- JPS5685873A JPS5685873A JP16275779A JP16275779A JPS5685873A JP S5685873 A JPS5685873 A JP S5685873A JP 16275779 A JP16275779 A JP 16275779A JP 16275779 A JP16275779 A JP 16275779A JP S5685873 A JPS5685873 A JP S5685873A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- silver
- window
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title abstract 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 4
- 229910052709 silver Inorganic materials 0.000 abstract 4
- 239000004332 silver Substances 0.000 abstract 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 229910052763 palladium Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
PURPOSE:To eliminate variations in the characteristics of a Schottky barrier diode element even in high temperature sealing by laminating a titanium layer, a palladium layer and a silver layer as laminated layer electrode interposed between an insulating layer and an exposed semiconductor layer when mounting a bump electrode on the semiconductor layer upon opening of a window at the insulating layer. CONSTITUTION:A P type layer 14 is epitaxially grown on a P<+> type Si substrate 15, an insulating layer 17 is covered thereon, a window is opened thereat, and an overhang structure electrode 16 is formed while covering the periphery of the window. At this time overhand structure is first formed, a titanium layer 18 having preferable adherence to the insulating layer 17 is covered thereon, and a palladium layer 19 and a silver layer 20 are sequentially laminated thereon. Thus, the layer 19 becoming adhesive unit is interposed between the layers 18 and 20 having worse adherence to one another, and the diffusion of the silver to the layer 18 and the Si layer 14 can be prevented. Thereafter, a hemispherical bump electrode 21 is formed on the layer 20, and an electrode 24 formed of a gold layer 22 and a silver layer 23 is covered on the back surface of the substrate 15. Thus, a Schottky barrier characteristic can be obtained as designed values.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16275779A JPS5685873A (en) | 1979-12-17 | 1979-12-17 | Schottky barrier diode element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16275779A JPS5685873A (en) | 1979-12-17 | 1979-12-17 | Schottky barrier diode element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5685873A true JPS5685873A (en) | 1981-07-13 |
Family
ID=15760657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16275779A Pending JPS5685873A (en) | 1979-12-17 | 1979-12-17 | Schottky barrier diode element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685873A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5135878A (en) * | 1990-08-28 | 1992-08-04 | Solid State Devices, Inc. | Schottky diode |
| JPH06163879A (en) * | 1992-11-18 | 1994-06-10 | Nec Corp | Semiconductor device and its manufacture |
| JPH06196723A (en) * | 1992-04-28 | 1994-07-15 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
-
1979
- 1979-12-17 JP JP16275779A patent/JPS5685873A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5135878A (en) * | 1990-08-28 | 1992-08-04 | Solid State Devices, Inc. | Schottky diode |
| JPH06196723A (en) * | 1992-04-28 | 1994-07-15 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JPH06163879A (en) * | 1992-11-18 | 1994-06-10 | Nec Corp | Semiconductor device and its manufacture |
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