JPS5683951A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5683951A
JPS5683951A JP16303579A JP16303579A JPS5683951A JP S5683951 A JPS5683951 A JP S5683951A JP 16303579 A JP16303579 A JP 16303579A JP 16303579 A JP16303579 A JP 16303579A JP S5683951 A JPS5683951 A JP S5683951A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor element
cathode
flat semiconductor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16303579A
Other languages
Japanese (ja)
Other versions
JPS6330779B2 (en
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16303579A priority Critical patent/JPS5683951A/en
Publication of JPS5683951A publication Critical patent/JPS5683951A/en
Publication of JPS6330779B2 publication Critical patent/JPS6330779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve antivibratory characteristic of a flat semiconductor element by a method wherein a resilient protective ring is inserted into a circumference between cathode, anode and the flat semiconductor element when each of the extended cathode and anode electrodes is fixed to both front and rear surfaces of the flat semiconductor. CONSTITUTION:Each of the cathode extended electrode 21 and anode extended electrode 22 is abutted against both front and rear surfaces of flat semiconductor element 10, a pressure P is externally applied to fix them. At this time, resilient protective rings 30 are installed between the element 10 and the electrode 21, and between the element 10 and the electrode 22 while being contacted with their circumferential parts. The rings 30 are made such that a stainless steel plate 31 is covered with a fluorine rubber 32, and a relation between a height (h) and a clearance H between the element and the circumference of interelectrodes is made to be h>H. With this arrangement, not only a superior connection between the semiconductor element and the electrode may be provided, but also an antivibratory characteristic may be increased, and antiexplosion feature may be expanded more.
JP16303579A 1979-12-12 1979-12-12 Semiconductor device Granted JPS5683951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16303579A JPS5683951A (en) 1979-12-12 1979-12-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16303579A JPS5683951A (en) 1979-12-12 1979-12-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5683951A true JPS5683951A (en) 1981-07-08
JPS6330779B2 JPS6330779B2 (en) 1988-06-21

Family

ID=15765939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16303579A Granted JPS5683951A (en) 1979-12-12 1979-12-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683951A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084926A (en) * 2006-09-26 2008-04-10 Mitsubishi Electric Corp Pressure-contact semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084926A (en) * 2006-09-26 2008-04-10 Mitsubishi Electric Corp Pressure-contact semiconductor device
US8456001B2 (en) 2006-09-26 2013-06-04 Mitsubishi Electric Corporation Pressure-contact semiconductor device

Also Published As

Publication number Publication date
JPS6330779B2 (en) 1988-06-21

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