JPS5674977A - High-frequency amplification semiconductor device - Google Patents

High-frequency amplification semiconductor device

Info

Publication number
JPS5674977A
JPS5674977A JP15164079A JP15164079A JPS5674977A JP S5674977 A JPS5674977 A JP S5674977A JP 15164079 A JP15164079 A JP 15164079A JP 15164079 A JP15164079 A JP 15164079A JP S5674977 A JPS5674977 A JP S5674977A
Authority
JP
Japan
Prior art keywords
lines
line
base plate
frequency
distributed constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15164079A
Other languages
Japanese (ja)
Inventor
Osamu Mitomi
Hideo Makishima
Masayoshi Aikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15164079A priority Critical patent/JPS5674977A/en
Publication of JPS5674977A publication Critical patent/JPS5674977A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an amplifier with an extensive band with operates with an extraordinarily high frequency by a method wherein metal electrodes constituting high-frequency transmitting lines with distributed constant are provided on one surface f a semiconductor base plate and electron beams or photobeams are applied to one end part of the electrodes or to the base plate. CONSTITUTION:Two Al slot lines 2 and 3 constituting high-frequency transmitting lines with distributed constant are formed in parallel at a certain interval on the surface of the GaAs semiconductor base plate 1, while they are made, simultaneously, shot-key barrier type diodes so as for the capacity of a joint part to be used for a part of the distributed constant. Next, a bias power source 5 is connected to the respective end parts of the lines 2 and 3 through an inductance 6 for intercepting high frequency, while on the back surface of the base plate 1 a microstrip line 7 for converting a mode is formed to cross the lines 2 and 3 perpendicularly. After that, an output transmitting line 8 formed of a coaxial line or a waveguide connected to a load resistance 9 is made to face the end part of the line 7, while being exposed between the lines 2 and 3. Thus, the beams are applied to a target part G and an amplified frequency signal is sent out to the line 8.
JP15164079A 1979-11-22 1979-11-22 High-frequency amplification semiconductor device Pending JPS5674977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15164079A JPS5674977A (en) 1979-11-22 1979-11-22 High-frequency amplification semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15164079A JPS5674977A (en) 1979-11-22 1979-11-22 High-frequency amplification semiconductor device

Publications (1)

Publication Number Publication Date
JPS5674977A true JPS5674977A (en) 1981-06-20

Family

ID=15522968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15164079A Pending JPS5674977A (en) 1979-11-22 1979-11-22 High-frequency amplification semiconductor device

Country Status (1)

Country Link
JP (1) JPS5674977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100145588A1 (en) * 2008-12-04 2010-06-10 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Creeping process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100145588A1 (en) * 2008-12-04 2010-06-10 Luk Lamellen Und Kupplungsbau Beteiligungs Kg Creeping process

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