JPS567321B1 - - Google Patents

Info

Publication number
JPS567321B1
JPS567321B1 JP6965569A JP6965569A JPS567321B1 JP S567321 B1 JPS567321 B1 JP S567321B1 JP 6965569 A JP6965569 A JP 6965569A JP 6965569 A JP6965569 A JP 6965569A JP S567321 B1 JPS567321 B1 JP S567321B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6965569A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS567321B1 publication Critical patent/JPS567321B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0029Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier using FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
JP6965569A 1963-07-19 1969-09-02 Pending JPS567321B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US296305A US3307110A (en) 1963-07-19 1963-07-19 Insulated gate field effect transistor translating circuit

Publications (1)

Publication Number Publication Date
JPS567321B1 true JPS567321B1 (ja) 1981-02-17

Family

ID=23141467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6965569A Pending JPS567321B1 (ja) 1963-07-19 1969-09-02

Country Status (5)

Country Link
US (1) US3307110A (ja)
JP (1) JPS567321B1 (ja)
DE (2) DE1591403B2 (ja)
GB (1) GB1039416A (ja)
SE (1) SE315012B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US3483473A (en) * 1966-04-04 1969-12-09 Motorola Inc Frequency converting and selecting system including mixer circuit with field effect transistor coupled to band-pass filter through impedance inverting circuit
US3448397A (en) * 1966-07-15 1969-06-03 Westinghouse Electric Corp Mos field effect transistor amplifier apparatus
JP2955106B2 (ja) * 1992-01-06 1999-10-04 三菱電機株式会社 半導体装置
US20180061984A1 (en) * 2016-08-29 2018-03-01 Macom Technology Solutions Holdings, Inc. Self-biasing and self-sequencing of depletion-mode transistors
US11463740B2 (en) 2019-02-06 2022-10-04 T-Mobile Usa, Inc. Client side behavior self-determination

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC DESIGN=1963 *
ELECTRONICS=1963 *

Also Published As

Publication number Publication date
DE1591403B2 (de) 1971-02-18
DE1249933B (de) 1967-09-14
SE315012B (ja) 1969-09-22
US3307110A (en) 1967-02-28
GB1039416A (en) 1966-08-17
DE1591403A1 (de) 1970-01-29

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