JPS5667763A - Voltage detecting circuit for electric power converter - Google Patents

Voltage detecting circuit for electric power converter

Info

Publication number
JPS5667763A
JPS5667763A JP14384579A JP14384579A JPS5667763A JP S5667763 A JPS5667763 A JP S5667763A JP 14384579 A JP14384579 A JP 14384579A JP 14384579 A JP14384579 A JP 14384579A JP S5667763 A JPS5667763 A JP S5667763A
Authority
JP
Japan
Prior art keywords
amplification
inputted
phototransistors
circuits
amplification circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14384579A
Other languages
Japanese (ja)
Inventor
Junichi Yoshinaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14384579A priority Critical patent/JPS5667763A/en
Publication of JPS5667763A publication Critical patent/JPS5667763A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE: To decrease the number of amplifiers and improve frequency response by connecting a plural number of light-receiving elements in aprallel so that an output from them may be inputted to an amplification circuit.
CONSTITUTION: When a voltage is applied to SCR's 1-1W1-n, a photosignal generated in LED's 5-1W5-n, and the light is transmitted to phototransistors PT 7-1W 7-n through the intermediary of photofibers 6-1W6-n. At the same time, two electric signals from a pair of phototransistors 7-1W7-n (n=2m) are inputted to amplification circuits 10-1W10-m and are amplified. Then their output signals are inputted to logic circuits 11 at a rate of (m) pieces per circuit and logically summed up. Here, if the (m) value is properly selected, the number of the amplification circuits 10-1W10-m can be reduced and, with a plural number of phototransistors connected to the amplification circuits, the latter can be used at lower amplification rate. Thus it is possible to reduce the number of amplification circuits and, at the same time, enhance frequency response.
COPYRIGHT: (C)1981,JPO&Japio
JP14384579A 1979-11-08 1979-11-08 Voltage detecting circuit for electric power converter Pending JPS5667763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14384579A JPS5667763A (en) 1979-11-08 1979-11-08 Voltage detecting circuit for electric power converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14384579A JPS5667763A (en) 1979-11-08 1979-11-08 Voltage detecting circuit for electric power converter

Publications (1)

Publication Number Publication Date
JPS5667763A true JPS5667763A (en) 1981-06-08

Family

ID=15348280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14384579A Pending JPS5667763A (en) 1979-11-08 1979-11-08 Voltage detecting circuit for electric power converter

Country Status (1)

Country Link
JP (1) JPS5667763A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62225962A (en) * 1986-03-27 1987-10-03 Yoshihide Maeda Current-quantity of light conversion detecting element
US9385071B2 (en) 2012-09-07 2016-07-05 Renesas Electronics Corporation Manufacturing method of semiconductor device and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026316B1 (en) * 1970-12-30 1975-08-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026316B1 (en) * 1970-12-30 1975-08-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62225962A (en) * 1986-03-27 1987-10-03 Yoshihide Maeda Current-quantity of light conversion detecting element
US9385071B2 (en) 2012-09-07 2016-07-05 Renesas Electronics Corporation Manufacturing method of semiconductor device and semiconductor device

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