JPS566629B2 - - Google Patents
Info
- Publication number
- JPS566629B2 JPS566629B2 JP12121476A JP12121476A JPS566629B2 JP S566629 B2 JPS566629 B2 JP S566629B2 JP 12121476 A JP12121476 A JP 12121476A JP 12121476 A JP12121476 A JP 12121476A JP S566629 B2 JPS566629 B2 JP S566629B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62075075A | 1975-10-08 | 1975-10-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5247318A JPS5247318A (en) | 1977-04-15 |
| JPS566629B2 true JPS566629B2 (online.php) | 1981-02-12 |
Family
ID=24487240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51121214A Granted JPS5247318A (en) | 1975-10-08 | 1976-10-07 | Charge storage device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5247318A (online.php) |
| DE (1) | DE2644829A1 (online.php) |
| FR (1) | FR2327644A1 (online.php) |
| GB (1) | GB1554590A (online.php) |
| NL (1) | NL7611106A (online.php) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4228446A (en) * | 1979-05-10 | 1980-10-14 | Rca Corporation | Reduced blooming device having enhanced quantum efficiency |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3403284A (en) * | 1966-12-29 | 1968-09-24 | Bell Telephone Labor Inc | Target structure storage device using diode array |
| FR1570707A (online.php) * | 1968-04-26 | 1969-06-13 | ||
| AU1303470A (en) * | 1969-04-29 | 1971-09-30 | Rca Corporation | Charge storage device having a sensitivity enhancing layer containing a high concentration of non-mobile charge |
| JPS5038450B1 (online.php) * | 1970-04-04 | 1975-12-10 | ||
| JPS504485B1 (online.php) * | 1970-09-29 | 1975-02-20 | ||
| US3755015A (en) * | 1971-12-10 | 1973-08-28 | Gen Electric | Anti-reflection coating for semiconductor diode array targets |
| US3761762A (en) * | 1972-02-11 | 1973-09-25 | Rca Corp | Image intensifier camera tube having an improved electron bombardment induced conductivity camera tube target comprising a chromium buffer layer |
| US3792197A (en) * | 1972-07-31 | 1974-02-12 | Bell Telephone Labor Inc | Solid-state diode array camera tube having electronic control of light sensitivity |
| FR2230086A1 (en) * | 1973-05-14 | 1974-12-13 | Centre Nat Etd Spatiales | Silicon solar cells with high efficiency - obtd. by doping transparent silica layer with stable ions |
-
1976
- 1976-09-28 GB GB40228/76A patent/GB1554590A/en not_active Expired
- 1976-10-05 DE DE19762644829 patent/DE2644829A1/de not_active Withdrawn
- 1976-10-05 FR FR7629862A patent/FR2327644A1/fr active Granted
- 1976-10-07 NL NL7611106A patent/NL7611106A/xx not_active Application Discontinuation
- 1976-10-07 JP JP51121214A patent/JPS5247318A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1554590A (en) | 1979-10-24 |
| DE2644829A1 (de) | 1977-04-21 |
| NL7611106A (nl) | 1977-04-13 |
| FR2327644A1 (fr) | 1977-05-06 |
| FR2327644B1 (online.php) | 1982-07-16 |
| JPS5247318A (en) | 1977-04-15 |