JPS5664517A - Semiconductor switch unit - Google Patents

Semiconductor switch unit

Info

Publication number
JPS5664517A
JPS5664517A JP11576980A JP11576980A JPS5664517A JP S5664517 A JPS5664517 A JP S5664517A JP 11576980 A JP11576980 A JP 11576980A JP 11576980 A JP11576980 A JP 11576980A JP S5664517 A JPS5664517 A JP S5664517A
Authority
JP
Japan
Prior art keywords
switch unit
semiconductor switch
semiconductor
unit
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11576980A
Other languages
English (en)
Inventor
Riaa Ansonii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5664517A publication Critical patent/JPS5664517A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for ac voltages or currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP11576980A 1979-08-22 1980-08-22 Semiconductor switch unit Pending JPS5664517A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7929184A GB2057188B (en) 1979-08-22 1979-08-22 Semiconductor switch device for a-c power control

Publications (1)

Publication Number Publication Date
JPS5664517A true JPS5664517A (en) 1981-06-01

Family

ID=10507350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11576980A Pending JPS5664517A (en) 1979-08-22 1980-08-22 Semiconductor switch unit

Country Status (5)

Country Link
US (1) US4370567A (ja)
EP (1) EP0025291B1 (ja)
JP (1) JPS5664517A (ja)
DE (1) DE3067265D1 (ja)
GB (1) GB2057188B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
EP0287856B1 (en) * 1987-03-31 1993-05-26 Kabushiki Kaisha Toshiba Gate-controlled bi-directional semiconductor switching device
US4857983A (en) * 1987-05-19 1989-08-15 General Electric Company Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
JPH01286465A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 双方向制御整流半導体装置
FR2745669B1 (fr) * 1996-02-29 1998-05-22 Sgs Thomson Microelectronics Interrupteur statique monolithique a trois etats
US7931360B2 (en) 2008-03-03 2011-04-26 Silverbrook Research Pty Ltd Printhead priming system with feedback control of priming pump

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053937A (ja) * 1965-07-23 1900-01-01
FR2253277B1 (ja) * 1973-11-30 1977-08-12 Silec Semi Conducteurs

Also Published As

Publication number Publication date
GB2057188A (en) 1981-03-25
US4370567A (en) 1983-01-25
EP0025291A1 (en) 1981-03-18
DE3067265D1 (en) 1984-05-03
GB2057188B (en) 1983-10-19
EP0025291B1 (en) 1984-03-28

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