JPS5659607A - Cubic system boron nitride synthesizing method - Google Patents

Cubic system boron nitride synthesizing method

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Publication number
JPS5659607A
JPS5659607A JP13361379A JP13361379A JPS5659607A JP S5659607 A JPS5659607 A JP S5659607A JP 13361379 A JP13361379 A JP 13361379A JP 13361379 A JP13361379 A JP 13361379A JP S5659607 A JPS5659607 A JP S5659607A
Authority
JP
Japan
Prior art keywords
cubic system
monosilane gas
finely powdered
silicon
decomposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13361379A
Other languages
Japanese (ja)
Inventor
Hiroshi Abe
Tatsuo Ogushi
Tsutomu Goto
Tomohisa Soeda
Norihiko Kabayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP13361379A priority Critical patent/JPS5659607A/en
Publication of JPS5659607A publication Critical patent/JPS5659607A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain cubic system BN under low pressure in a high yield by synthesizing cubic system BN in the presence of finely powdered silicon formed by the thermal decomposition of monosilane gas and AlN as catalyst.
CONSTITUTION: Cubic system BN is synthesized in the presence of a mixture of finely powdered silicon formed by the thermal decomposition of monosilane gas heated to 400W650°C and AlN as catalyst. The oxygen content of the silicon is preferably adjusted to ≤0.01%, so it is desirable to thoroughly substitute Ar, He or other gas inert to monosilane gas for air in an apparatus for decomposing monosilane gas before starting the decomposition. Even if monosilane gas is decomposed in a higher temp. zone, by capturing silicon as a decomposition product in the 400W 650°C region, finely powdered silicon of ≤0.01% oxygen content fit for synthesizing cubic system BN is obtd.
COPYRIGHT: (C)1981,JPO&Japio
JP13361379A 1979-10-18 1979-10-18 Cubic system boron nitride synthesizing method Pending JPS5659607A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13361379A JPS5659607A (en) 1979-10-18 1979-10-18 Cubic system boron nitride synthesizing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13361379A JPS5659607A (en) 1979-10-18 1979-10-18 Cubic system boron nitride synthesizing method

Publications (1)

Publication Number Publication Date
JPS5659607A true JPS5659607A (en) 1981-05-23

Family

ID=15108897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13361379A Pending JPS5659607A (en) 1979-10-18 1979-10-18 Cubic system boron nitride synthesizing method

Country Status (1)

Country Link
JP (1) JPS5659607A (en)

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