JPS5656635A - Correcting method for photoresist pattern - Google Patents

Correcting method for photoresist pattern

Info

Publication number
JPS5656635A
JPS5656635A JP13460979A JP13460979A JPS5656635A JP S5656635 A JPS5656635 A JP S5656635A JP 13460979 A JP13460979 A JP 13460979A JP 13460979 A JP13460979 A JP 13460979A JP S5656635 A JPS5656635 A JP S5656635A
Authority
JP
Japan
Prior art keywords
coordinate
wafer
cut
etching
jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13460979A
Other languages
Japanese (ja)
Inventor
Mototsugu Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13460979A priority Critical patent/JPS5656635A/en
Publication of JPS5656635A publication Critical patent/JPS5656635A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To shorten a correcting process for resist pattern sharply by sticking a charged etching resisting matter when a cut is detected on the pattern. CONSTITUTION:A notch on a wafer 17 is contacted to a plane of a notch detecting jig 14 by means of said jig 14, a fixed jig 15 and a control system 16, which is scanned for judgement on availability as compared with an original pattern. When a cut is found on a coordinate (a, b) in a resist pattern on the wafer, electromagnet plates 21-24 are actuated 20 to recognize the coordinate and the cut, and a needle electrode 25 is controlled positionally to the coordinate (a, b) from behind the wafer. On the top of the wafer, an electrode 28 under a spot coating device 26 for etching resisting matter which works as a nozzle at the same time is controlled positionally to the coordinate (a, b) by control systems 20, 27. High voltage is applied on the electrodes 28, 25 through the control system 20, thereby sticking a charged particle 29 of the etching resisting matter to the cut. Where a short circuit is detected on the coordinate (c, d) the nose of a device 31 for laser beam or the like is introduced to the coordinate (c, d) in the same way, thus etching the short circuit.
JP13460979A 1979-10-15 1979-10-15 Correcting method for photoresist pattern Pending JPS5656635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13460979A JPS5656635A (en) 1979-10-15 1979-10-15 Correcting method for photoresist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13460979A JPS5656635A (en) 1979-10-15 1979-10-15 Correcting method for photoresist pattern

Publications (1)

Publication Number Publication Date
JPS5656635A true JPS5656635A (en) 1981-05-18

Family

ID=15132392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13460979A Pending JPS5656635A (en) 1979-10-15 1979-10-15 Correcting method for photoresist pattern

Country Status (1)

Country Link
JP (1) JPS5656635A (en)

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