JPS5653827B2 - - Google Patents

Info

Publication number
JPS5653827B2
JPS5653827B2 JP6129377A JP6129377A JPS5653827B2 JP S5653827 B2 JPS5653827 B2 JP S5653827B2 JP 6129377 A JP6129377 A JP 6129377A JP 6129377 A JP6129377 A JP 6129377A JP S5653827 B2 JPS5653827 B2 JP S5653827B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP6129377A
Other languages
Japanese (ja)
Other versions
JPS52153346A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS52153346A publication Critical patent/JPS52153346A/ja
Publication of JPS5653827B2 publication Critical patent/JPS5653827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/243Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0562Details of resist
    • H05K2203/0574Stacked resist layers used for different processes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Thin Magnetic Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP6129377A 1976-06-14 1977-05-27 Method of metallizing selectively infinitesimal electronic device Granted JPS52153346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/695,484 US4088490A (en) 1976-06-14 1976-06-14 Single level masking process with two positive photoresist layers

Publications (2)

Publication Number Publication Date
JPS52153346A JPS52153346A (en) 1977-12-20
JPS5653827B2 true JPS5653827B2 (US20110009641A1-20110113-C00256.png) 1981-12-22

Family

ID=24793181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6129377A Granted JPS52153346A (en) 1976-06-14 1977-05-27 Method of metallizing selectively infinitesimal electronic device

Country Status (5)

Country Link
US (1) US4088490A (US20110009641A1-20110113-C00256.png)
JP (1) JPS52153346A (US20110009641A1-20110113-C00256.png)
DE (1) DE2722557A1 (US20110009641A1-20110113-C00256.png)
FR (1) FR2394892A1 (US20110009641A1-20110113-C00256.png)
GB (1) GB1522580A (US20110009641A1-20110113-C00256.png)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201800A (en) * 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
DE2947952C2 (de) * 1979-03-27 1985-01-10 Control Data Corp., Minneapolis, Minn. Verfahren zur Herstellung eines Bläschenspeicher-Chips
US4272561A (en) * 1979-05-29 1981-06-09 International Business Machines Corporation Hybrid process for SBD metallurgies
DE3016050C2 (de) * 1980-04-25 1985-08-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Fotolackstrukturen für integrierte Halbleiterschaltungsanordnungen
US4591547A (en) * 1982-10-20 1986-05-27 General Instrument Corporation Dual layer positive photoresist process and devices
US4464458A (en) * 1982-12-30 1984-08-07 International Business Machines Corporation Process for forming resist masks utilizing O-quinone diazide and pyrene
US4939071A (en) * 1984-03-06 1990-07-03 Harris Corporation Method for forming low resistance, sub-micrometer semiconductor gate structures
US5135891A (en) * 1988-01-19 1992-08-04 Mitsubishi Denki Kabushiki Kaisha Method for forming film of uniform thickness on semiconductor substrate having concave portion
GB2215087B (en) * 1988-02-03 1992-04-01 Plessey Co Plc A method of processing substrates for mounting optical elements and components
US5225771A (en) * 1988-05-16 1993-07-06 Dri Technology Corp. Making and testing an integrated circuit using high density probe points
US5103557A (en) * 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US6288561B1 (en) * 1988-05-16 2001-09-11 Elm Technology Corporation Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus
US5209688A (en) * 1988-12-19 1993-05-11 Narumi China Corporation Plasma display panel
US5091288A (en) * 1989-10-27 1992-02-25 Rockwell International Corporation Method of forming detector array contact bumps for improved lift off of excess metal
US5145717A (en) * 1990-01-31 1992-09-08 E. I. Du Pont De Nemours And Company Stripping method for removing resist from a printed circuit board
US5278008A (en) * 1990-10-31 1994-01-11 Hughes Aircraft Company Diffraction efficiency control in holographic elements
JPH0687084B2 (ja) * 1990-11-07 1994-11-02 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン カラーフイルタの製造方法
JP2831847B2 (ja) * 1990-11-29 1998-12-02 株式会社東芝 半導体装置の製造方法
US5494839A (en) * 1994-05-03 1996-02-27 United Microelectronics Corporation Dual photo-resist process for fabricating high density DRAM
US6060220A (en) * 1995-07-10 2000-05-09 The Board Of Trustees Of The Leland Stanford Junior University Method for producing an optical information carrier having a variable relief structure
KR0177785B1 (ko) * 1996-02-03 1999-03-20 김광호 오프셋 구조를 가지는 트랜지스터 및 그 제조방법
US7773340B2 (en) * 1999-02-23 2010-08-10 Advanced Research Corporation Patterned magnetic recording head having a gap pattern with substantially elliptical or substantially diamond-shaped termination pattern
US20030093894A1 (en) * 1999-02-23 2003-05-22 Dugas Matthew P. Double layer patterning and technique for making a magnetic recording head
US6269533B2 (en) * 1999-02-23 2001-08-07 Advanced Research Corporation Method of making a patterned magnetic recording head
US6496328B1 (en) * 1999-12-30 2002-12-17 Advanced Research Corporation Low inductance, ferrite sub-gap substrate structure for surface film magnetic recording heads
JP3754337B2 (ja) 2001-09-28 2006-03-08 株式会社クラレ 樹脂成形品の製造方法、樹脂成形品及び金型の製造方法
US6905975B2 (en) * 2003-07-03 2005-06-14 Micron Technology, Inc. Methods of forming patterned compositions
US8144424B2 (en) 2003-12-19 2012-03-27 Dugas Matthew P Timing-based servo verify head and magnetic media made therewith
US7283317B2 (en) * 2004-01-30 2007-10-16 Advanced Research Corporation Apparatuses and methods for pre-erasing during manufacture of magnetic tape
US20100321824A1 (en) * 2004-02-18 2010-12-23 Dugas Matthew P Magnetic recording head having secondary sub-gaps
JP2007536683A (ja) * 2004-05-04 2007-12-13 アドバンスト・リサーチ・コーポレーション 任意形状のギャップ・パターンのための集積型薄膜サブギャップ/サブ磁極構造、磁気記録ヘッド、及びその製造方法
WO2009094516A1 (en) * 2008-01-23 2009-07-30 Advanced Research Corporation Recording heads with embedded tape guides and magnetic media made by such recording heads
US8068302B2 (en) * 2008-03-28 2011-11-29 Advanced Research Corporation Method of formatting magnetic media using a thin film planar arbitrary gap pattern magnetic head
WO2011014836A2 (en) * 2009-07-31 2011-02-03 Advanced Research Corporation Erase drive systems and methods of erasure for tape data cartridge
US9219178B2 (en) * 2014-03-21 2015-12-22 Kabushiki Kaisha Toshiba Method to fabricate collimator structures on a direct conversion semiconductor X-ray detector

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506441A (en) * 1967-06-02 1970-04-14 Rca Corp Double photoresist processing
US3745094A (en) * 1971-03-26 1973-07-10 Ibm Two resist method for printed circuit structure
US3955981A (en) * 1975-01-06 1976-05-11 Zenith Radio Corporation Method of forming electron-transmissive apertures in a color selection mask by photoetching with two resist layers
US3957552A (en) * 1975-03-05 1976-05-18 International Business Machines Corporation Method for making multilayer devices using only a single critical masking step

Also Published As

Publication number Publication date
JPS52153346A (en) 1977-12-20
US4088490A (en) 1978-05-09
GB1522580A (en) 1978-08-23
FR2394892A1 (fr) 1979-01-12
FR2394892B1 (US20110009641A1-20110113-C00256.png) 1980-02-01
DE2722557A1 (de) 1977-12-22

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