JPS5653232B2 - - Google Patents
Info
- Publication number
- JPS5653232B2 JPS5653232B2 JP14600675A JP14600675A JPS5653232B2 JP S5653232 B2 JPS5653232 B2 JP S5653232B2 JP 14600675 A JP14600675 A JP 14600675A JP 14600675 A JP14600675 A JP 14600675A JP S5653232 B2 JPS5653232 B2 JP S5653232B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Led Devices (AREA)
- Weting (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7440216A FR2294549A1 (fr) | 1974-12-09 | 1974-12-09 | Procede de realisation de dispositifs optoelectroniques |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5183488A JPS5183488A (ja) | 1976-07-22 |
JPS5653232B2 true JPS5653232B2 (ja) | 1981-12-17 |
Family
ID=9145750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14600675A Expired JPS5653232B2 (ja) | 1974-12-09 | 1975-12-09 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4094752A (ja) |
JP (1) | JPS5653232B2 (ja) |
DE (1) | DE2554029A1 (ja) |
FR (1) | FR2294549A1 (ja) |
GB (1) | GB1531500A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5875251A (ja) * | 1981-10-28 | 1983-05-06 | Nec Corp | 誤動作検出回路 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3041228A1 (de) * | 1980-11-03 | 1982-05-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Leuchtdiode vom mesatyp |
US4681657A (en) * | 1985-10-31 | 1987-07-21 | International Business Machines Corporation | Preferential chemical etch for doped silicon |
JP2784537B2 (ja) * | 1989-03-29 | 1998-08-06 | 新日本無線株式会社 | 発光ダイオードの製造方法 |
US5055892A (en) * | 1989-08-29 | 1991-10-08 | Hewlett-Packard Company | High efficiency lamp or light accepter |
DE4305297C2 (de) * | 1993-02-20 | 1998-09-24 | Telefunken Microelectron | Strukturbeize für Halbleiter und deren Anwendung |
KR970007379A (ko) * | 1995-07-19 | 1997-02-21 | 김주용 | 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법 |
DE19924316B4 (de) * | 1999-05-27 | 2010-10-07 | Zumtobel Lighting Gmbh | Lumineszenzdiode |
WO2001073859A1 (en) * | 2000-03-24 | 2001-10-04 | Nova Crystals, Inc. | Enhanced-output light emitting diode and method of making the same |
WO2002059983A1 (en) * | 2000-11-17 | 2002-08-01 | Emcore Corporation | Led package having improved light extraction and methods therefor |
US6946788B2 (en) * | 2001-05-29 | 2005-09-20 | Toyoda Gosei Co., Ltd. | Light-emitting element |
DE10148227B4 (de) | 2001-09-28 | 2015-03-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement |
TWI236772B (en) * | 2002-03-14 | 2005-07-21 | Toshiba Corp | Semiconductor light emitting element and semiconductor light emitting device |
WO2004032248A2 (de) * | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung |
JP4334864B2 (ja) * | 2002-12-27 | 2009-09-30 | 日本電波工業株式会社 | 薄板水晶ウェハ及び水晶振動子の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3302051A (en) * | 1963-12-12 | 1967-01-31 | Gen Electric | Semiconductive alloy light source having improved optical transmissivity |
DE1489517A1 (de) * | 1965-07-07 | 1969-05-14 | Siemens Ag | Lumineszenzdiode mit einem A?-Halbleiter-Einkristall und einem durch Legieren hergestellten ebenen pn-UEbergang |
JPS4844830B1 (ja) * | 1969-08-21 | 1973-12-27 | Tokyo Shibaura Electric Co | |
US3679501A (en) * | 1970-04-13 | 1972-07-25 | Ibm | Method of polishing gallium phosphide |
US3756877A (en) * | 1970-10-05 | 1973-09-04 | Tokyo Shibaura Electric Co | By dielectric material method for manufacturing a semiconductor integrated circuit isolated |
JPS519269B2 (ja) * | 1972-05-19 | 1976-03-25 | ||
US3833435A (en) * | 1972-09-25 | 1974-09-03 | Bell Telephone Labor Inc | Dielectric optical waveguides and technique for fabricating same |
US3801391A (en) * | 1972-09-25 | 1974-04-02 | Bell Telephone Labor Inc | Method for selectively etching alxga1-xas multiplier structures |
US3959098A (en) * | 1973-03-12 | 1976-05-25 | Bell Telephone Laboratories, Incorporated | Electrolytic etching of III - V compound semiconductors |
DE2323438C3 (de) * | 1973-05-09 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen eines Halbleiterbauelementes |
US3892606A (en) * | 1973-06-28 | 1975-07-01 | Ibm | Method for forming silicon conductive layers utilizing differential etching rates |
US3894895A (en) * | 1973-10-29 | 1975-07-15 | Trw Inc | Mesa etching without overhang for semiconductor devices |
-
1974
- 1974-12-09 FR FR7440216A patent/FR2294549A1/fr active Granted
-
1975
- 1975-12-02 DE DE19752554029 patent/DE2554029A1/de active Granted
- 1975-12-05 GB GB49996/75A patent/GB1531500A/en not_active Expired
- 1975-12-08 US US05/638,901 patent/US4094752A/en not_active Expired - Lifetime
- 1975-12-09 JP JP14600675A patent/JPS5653232B2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5875251A (ja) * | 1981-10-28 | 1983-05-06 | Nec Corp | 誤動作検出回路 |
Also Published As
Publication number | Publication date |
---|---|
DE2554029A1 (de) | 1976-06-10 |
FR2294549A1 (fr) | 1976-07-09 |
JPS5183488A (ja) | 1976-07-22 |
US4094752A (en) | 1978-06-13 |
FR2294549B1 (ja) | 1977-03-25 |
GB1531500A (en) | 1978-11-08 |
DE2554029C2 (ja) | 1987-02-19 |