JPS56501226A - - Google Patents

Info

Publication number
JPS56501226A
JPS56501226A JP50204080A JP50204080A JPS56501226A JP S56501226 A JPS56501226 A JP S56501226A JP 50204080 A JP50204080 A JP 50204080A JP 50204080 A JP50204080 A JP 50204080A JP S56501226 A JPS56501226 A JP S56501226A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50204080A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS56501226A publication Critical patent/JPS56501226A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00—Investigating resistance of materials to the weather, to corrosion, or to light
    • G01N17/02—Electrochemical measuring systems for weathering, corrosion or corrosion-protection measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Ecology (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP50204080A 1979-08-30 1980-07-28 Pending JPS56501226A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7140879A 1979-08-30 1979-08-30

Publications (1)

Publication Number Publication Date
JPS56501226A true JPS56501226A (OSRAM) 1981-08-27

Family

ID=22101119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50204080A Pending JPS56501226A (OSRAM) 1979-08-30 1980-07-28

Country Status (3)

Country Link
EP (1) EP0035529A4 (OSRAM)
JP (1) JPS56501226A (OSRAM)
WO (1) WO1981000646A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755442A (en) * 1985-08-19 1988-07-05 Kabushiki Kaisha Toshiba Pattern developing process and apparatus therefor

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621037A (en) * 1984-07-09 1986-11-04 Sigma Corporation Method for detecting endpoint of development
US4662975A (en) * 1986-02-10 1987-05-05 The Boeing Company Apparatus for determining the etch rate of nonconductive materials
US5573624A (en) * 1992-12-04 1996-11-12 International Business Machines Corporation Chemical etch monitor for measuring film etching uniformity during a chemical etching process
US5582746A (en) * 1992-12-04 1996-12-10 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5501766A (en) * 1994-06-30 1996-03-26 International Business Machines Corporation Minimizing overetch during a chemical etching process
US5445705A (en) * 1994-06-30 1995-08-29 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5480511A (en) * 1994-06-30 1996-01-02 International Business Machines Corporation Method for contactless real-time in-situ monitoring of a chemical etching process
US5489361A (en) * 1994-06-30 1996-02-06 International Business Machines Corporation Measuring film etching uniformity during a chemical etching process
US5516399A (en) * 1994-06-30 1996-05-14 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching
FR2772926B1 (fr) * 1997-12-24 2000-03-10 Cis Bio Int Dispositif et procede de test d'elements sensibles d'une puce electronique
DE10111803A1 (de) * 2001-03-12 2002-06-27 Infineon Technologies Ag Anordnung und Verfahren zum rückseitigen Kontaktieren eines Halbleitersubstrats

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553052A (en) * 1965-10-24 1971-01-05 Louis A Scholz Etching control device
US3475242A (en) * 1966-12-19 1969-10-28 Fmc Corp Process and apparatus for controlling metal etching operation
US3874959A (en) * 1973-09-21 1975-04-01 Ibm Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor
US4039370A (en) * 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
US4080246A (en) * 1976-06-29 1978-03-21 Gaf Corporation Novel etching composition and method for using same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4755442A (en) * 1985-08-19 1988-07-05 Kabushiki Kaisha Toshiba Pattern developing process and apparatus therefor

Also Published As

Publication number Publication date
WO1981000646A1 (en) 1981-03-05
EP0035529A4 (en) 1982-02-16
EP0035529A1 (en) 1981-09-16

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